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Using Self-assembly and Selective Chemical Vapor Deposition for Precise Positioning of Individual Germanium Nanoparticles on Hafnia

Published online by Cambridge University Press:  01 February 2011

Shawn S Coffee
Affiliation:
[email protected], University of Texas at Austin, Chemical Engineering, 1 University Station C0400, Austin, TX, 78712, United States
Wyatt A Winkenwerder
Affiliation:
[email protected], University of Texas at Austin, Chemical Engineering, 1 University Station C0400, Austin, TX, 78712, United States
Scott K Stanley
Affiliation:
[email protected], University of Texas at Austin, Chemical Engineering, 1 University Station C0400, Austin, TX, 78712, United States
Shahrjerdi Davood
Affiliation:
[email protected], University of Texas at Austin, Electrical and Computer Engineering, 1 University Station C0803, Austin, TX, 78712, United States
Sanjay K Banerjee
Affiliation:
[email protected], University of Texas at Austin, Electrical and Computer Engineering, 1 University Station C0803, Austin, TX, 78712, United States
John G Ekerdt
Affiliation:
[email protected], University of Texas at Austin, Chemical Engineering, 1 University Station C0400, Austin, TX, 78712, United States
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Abstract

Germanium nanoparticle nucleation was studied in organized arrays on HfO2 using a SiO2 thin film mask with ~20-24 nm pores and a 6×1010 cm-2 pore density. Poly(styrene-b-methyl methacrylate) diblock copolymer was employed to pattern the SiO2 film. Hot wire chemical vapor deposition produced Ge nanoparticles using 4-19 monolayer Ge exposures. By seeding adatoms on HfO2 at room temperature before growth and varying growth temperatures between 725-800 K, nanoparticle size was demonstrated to be limited by Ge etching of SiO2 pore walls.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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