In this study, coatings containing Ca and P elements on Ti6Al4V alloy were fabricated by micro-arc oxidation at different applied voltages. Subsequently, evaluation of the phase structure, morphology, element composition, corrosion mechanism, and tribocorrosion behavior of these coatings was performed. The results showed that the coatings consisted of rutile TiO2 and anatase TiO2. The ratio of rutile/anatase, surface roughness, and hardness increase with the increase of applied voltage. Electrochemical impedance spectroscopy results indicated the corrosion resistance of coatings in simulated body fluid of 400 V > 380 V > 420 V. The open circuit potential of sample 400 V declined during the tribocorrosion test. Sample 420 V possessed the highest wear volume after the tribocorrosion process. The tribocorrosion mechanism of samples 380 and 420 V was mainly confirmed as the wear effect, and the decline of corrosion resistance due to the micro-cracks formed during the abrasive wear of the coating accounts for the tribocorrosion mechanism of sample 400 V.

Theoretical calculations and experimental observations show MoTe2 is a type II Weyl semimetal, along with many members of transition metal dichalcogenides family. We have grown highly crystalline large-area MoTe2 thin films on Si/SiO2 substrates by chemical vapor deposition. Very uniform, continuous, and smooth films were obtained as confirmed by scanning electron microscopy and atomic force microscopy analyses. Measurements of the temperature dependence of longitudinal resistivity and current–voltage characteristics at different temperature are discussed. Unsaturated, positive quadratic magnetoresistance of the as-grown thin films has been observed from 10 to 200 K. Hall resistivity measurements confirm the majority charge carriers are hole.

The synergetic effects of surface smoothing exhibited during the inductively coupled plasma reactive ion etching (ICP-RIE) of free-standing polycrystalline diamonds (PCDs) were investigated. Changing the assistive gas types generated variable surface oxidation states and chemical environments that resulted in different etching rates and surface morphologies. The main reaction bond mechanism (C–O) during ICP-RIE and the ratio of C–O–C/O–C=O associated with the existence of a uniform smooth surface with root mean square (RMS) roughness of 2.36 nm were observed. An optimal process for PCD smoothing at high etching rate (4.6 μm/min) was achieved as follows: 10% gas additions of CHF3 in O2 plasma at radio frequency power of 400 W. The further etched ultra-smooth surface with RMS roughness <0.5 nm at etching rate of 0.23 μm/min that being produced by transferring this optimum recipe on single crystal diamonds with surface patterns confirmed the effectiveness of the fast smoothing approach and its feasibility for diamond surface patterning.

Silver/titanium dioxide (Ag/TiO2) membranes were successfully deposited on poly(sulfone amide) substrates by direct current magnetron sputtering and radio frequency magnetron sputtering techniques with pure silver (Ag) and TiO2 targets. The prepared membranes were systematically characterized by scanning electron microscopy X-ray diffraction, insulation tests, and Fourier transform infrared spectrometry. The dependence of the main sputtering parameters on optical and thermal properties of the film was investigated by an orthogonal analysis method. Optimal parameters of fabricate Ag/TiO2 membranes with better comprehensive performances could be obtained ultimately. The infrared reflection rate and temperature difference of the Ag/TiO2 film deposited with the optimized parameters were 81.6% and 90 °C, respectively. The high infrared reflection and excellent thermal conductivity properties of the Ag/TiO2 composite membrane make it a promising candidate for thermal insulating coatings on fabrics, and can be used for the development of high-performance protective garments in the future.

Microwave plasma chemical vapor deposition (MPCVD) was used to diffuse boron into tantalum using plasma initiated from a feedgas mixture containing hydrogen and diborane. The role of substrate temperature and substrate bias in influencing surface chemical structure and hardness was investigated. X-ray diffraction shows that increased temperature results in increased TaB2 formation (relative to TaB) along with increased strain in the tantalum body-centered cubic lattice. Once the strained tantalum becomes locally supersaturated with boron, TaB and TaB2 precipitate. Additional boron remains in a solid solution within the tantalum. The combination of precipitation and solid solution hardening along with boron-induced lattice strain may help explain the 40 GPa average hardness measured by nanoindentation. Application of negative substrate bias did not further increase the hardness, possibly due to etching from increased ion bombardment. These results show that MPCVD is a viable method for synthesis of superhard borides based on plasma-assisted diffusion.

This article reports findings when using a molybdenum–tungsten (MoW) interlayer for diamond thin film deposition on steel substrates. The main focus was on the postdeposition stress within the diamond films and its impact on the coating's tribological properties. The effect of MoW interlayer thickness and the effect of chemical vapor deposition (CVD) process temperature have been investigated. Nanocrystalline diamond films were deposited on steel substrates with MoW interlayers (thickness of 1.1, 4.5, and 8.3 μm) at two different deposition temperatures (650 and 875 °C). It was found that when depositing good quality diamond films on steel substrates, increasing interlayer thickness and decreasing CVD process temperature have to be jointly considered to obtain the optimal result. The diamond-coated steel substrates with the 8.3 μm interlayer deposited at the lower CVD processing temperature exhibited the least residual stress combined with excellent mechanical properties.

A CoNiCrAlTaHfY/Co composite coating was prepared on the etched C/C composites by using duplex vapor phase surface alloying treatments, i.e., Co alloying and Co–Ni–Cr–Al–Ta–Hf–Y alloying. Microstructures and oxidation behavior of the coated C/C composites were analyzed by scanning electron microscopy, energy-dispersive spectroscopy, and X-ray diffraction. The result showed that the CoNiCrAlTaHfY/Co composite coating, 25 μm in thickness, was compact and composed of CrCoTa, AlCo2Ta, AlxCry, AlxNiy, and Co. The coating adhesion can be enhanced by microwave plasma chemical vapor deposition etching of matrix surface and adding a Co intermediate layer between the CoNiCrAlTaHfY top layer and C/C composites substrate. The honeycomb structure after etching was helpful to alloying element absorb and diffuse into substrate surface, and the composite coating continuation was improved by the Co buffer layer. After exposing in air for 180 min at 1000 °C, the bulk C/C composites volatilized while the loss rate of coated C/C composites was 0.82%, showing an improved oxidation resistance. Mixed oxides mainly containing Al2O3 and Cr2O3 were formed in the composite coating surface and protected the C/C composites from oxidation in air.

The development of GaN-on-diamond devices offers bright prospects for the creation of high-power density electronics. This article presents a process of fabricating GaN-on-diamond structure by depositing diamond films on dual sides, including heat dissipation diamond film and sacrificial carrier diamond film. Prior to heat dissipation diamond film layer preparation, aluminum nitride (AlN) is chosen as a dielectric layer and pretreated by nanodiamond (ND) particles, to enhance the nucleation density. Zeta potential measurements and X-ray photoelectron spectroscopy are used to analyze the AlN surface after each treatment. The results show that oxygen-terminated ND particles tend to adhere to an AlN surface because the oxygen-terminated NDs have –COOH and –OH groups, and hold a negative potential. On the contrary, fluorine-terminated AlN prefers to attract the hydrogen-terminated ND seeds, which resulted in higher diamond nucleation density. Based on this preliminary study, a dense high-quality GaN-on-diamond wafer is successfully produced by using AlN as the dielectric layer and a diamond film as the sacrificial carrier.

Ta–W co-alloying was realized by double glow plasma surface metallurgy technology, and their effects on high-temperature oxidation behavior of γ-TiAl were studied. Ta–W co-alloying coating was composed of a deposited layer and interdiffusion layer. The results of isothermal oxidation experiment indicated that a compact mixed oxide film of Ta and W was formed on the sample. The interdiffusion layer reduced the oxygen intrusion that improved the high-temperature oxidation resistance of γ-TiAl. The effects of Ta–W co-alloying on oxygen adsorption energy and electronic structure of γ-TiAl(111) were analyzed by first-principle calculation. The results showed that the optimal adsorption sites of O atoms changed from fcc-Al to hcp-Ti and hcp-Al, indicating that Ta–W co-alloying inhibited the diffusion of O. The electronic structure analysis of γ-TiAl(111) after Ta–W alloying indicated the affinity of Ti and O was inhibited, which resulted in decreased TiO2 in the oxide film.

To study the interface characteristics between substrates and homoepitaxially grown single crystalline diamond layers, the high-pressure/high-temperature Ib diamond seeds with homoepitaxial diamond layers were annealed by low-pressure/high-temperature treatment in a hydrogen environment. The stress evolution and related impurity transformation near the interface were characterized by Raman spectroscopy, photoluminescence, and micro-infrared spectroscopy before and after annealing. It is found that the stress is the smallest in a 100 μm wide zone near the interface, accompanying with the similar change in substitutional nitrogen (Ns) concentration. After annealing at 1050 °C, 1250 °C, and 1450 °C, the local compressive stress is released gradually with temperature change. It is decreased by 1.03 GPa in maximum after annealing at 1450 °C. The concentration of nitrogen–vacancy (NV) complexes in the chemical vapor deposition (CVD) layer is dramatically reduced at 1450 °C. The value of ${{I_{{\rm{NV}}^ \hbox- } } \mathord{\left/ {\vphantom {{I_{{\rm{NV}}^ - } } {I_{{\rm{diamond}}} }}} \right. \kern-\nulldelimiterspace} {I_{{\rm{diamond}}} }}$ decreases much more than ${{I_{{\rm{NV}}^0 } } \mathord{\left/ {\vphantom {{I_{{\rm{NV}}^0 } } {I_{{\rm{diamond}}} }}} \right. \kern-\nulldelimiterspace} {I_{{\rm{diamond}}} }}$ in the CVD layer, which is due to the lower stability of NV− compared with NV0 at high temperature.