This article is based on the plenary address given by George M. Whitesides of Harvard University on March 30, 2005, at the Materials Research Society Spring Meeting in San Francisco. Materials science and biomedicine are arguably two of the most exciting fields in science today. Research at the border between them will inevitably be a major focus, and the applications of materials science to problems in biomedicine—that is, biomaterials science—will bud into an important new branch of materials science. Accelerating the growth of this area requires an understanding of two very different fields, and being both thoughtful and entrepreneurial in considering “Why?” “How?” and “Where?” to put them together. In this fusion, biomedicine will, we believe, set the agenda; materials science will follow, and materials scientists must learn biology to be effective.

The following article is based on the Outstanding Young Investigator Award presentation given by Harold Y. Hwang of the University of Tokyo on March 29, 2005, at the Materials Research Society Spring Meeting in San Francisco. Hwang was cited for “innovative work on the physics of transition-metal oxides and the atomic-scale synthesis of complex oxide heterostructures.” Perovskite oxides range from insulators to superconductors and can incorporate magnetism as well as couple to phonon instabilities. The close lattice match between many perovskites raises the possibility of growing epitaxial thin-film heterostructures with different ground states that may compete or interact. The recent development of superconducting Josephson junctions, magnetic tunnel junctions, ferroelectric memory cells, and resistive switching can be considered examples within this new heteroepitaxial family. In this context, Hwang presents his studies of electronic structure at atomically abrupt interfaces grown by pulsed laser deposition. Some issues are generic to all heterointerfaces, such as the stability of dopant profiles and diffusion, interface states and depletion, and interface charge arising from polarity discontinuities. A more unusual issue is the charge structure associated with Mott insulator/band insulator interfaces. The question is, how should one consider the correlated equivalent of band bending? This semiconductor concept is based on the validity of rigid single-particle band diagrams, which are known to be an inadequate description for strongly correlated electrons. In addition to presenting an interesting scientific challenge, this question underlies the attempts to develop new applications of doped Mott insulators in device geometries.

Over the last few years, the performance of electron microscopes has undergone a dramatic improvement, with achievable resolution having more than doubled. It is now possible to probe individual atomic sites in many materials and to determine atomic and electronic structure with single-atom sensitivity. This revolution has been enabled by the successful correction of the dominant aberrations present in electron lenses. In this review, the authors present a brief overview of these instrumental advances, emphasizing the new insights they provide to several areas of materials research.

Nanoscience has, in many ways, grown up in parallel with the Materials Research Society. Although “nanoscience” and “nanotechnology” are buzzwords that were “discovered” in Washington, D.C., and in the capitals of countries around the world a number of years ago, nanoscience has actually been developing for several decades. The emergence of nanoscience as a fascinating and fruitful area of research has occurred primarily for two reasons: (1) materials have new and unpredictable properties at the nanoscale; and (2) it is now possible to make things controllably on the nanoscale and to see them.