Dmitri Strukov
Guest Editor for this issue of MRS Bulletin
Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, CA 93106; tel. 805-893-2971; and email [email protected].
Strukov is an assistant professor in the Electrical and Computer Engineering Department at the University of California, Santa Barbara. Prior to joining UCSB, he worked as a postdoctoral associate at Hewlett Packard Laboratories from 2007–2009 on various aspects of reconfigurable nanoelectronic systems, including resistive switching (“memristive”) device modeling, circuit architectures, and design automation tools, for applications in digital memories, programmable logic, and in neuromorphic networks. He received his MS degree in applied physics and mathematics from the Moscow Institute of Physics and Technology in 1999 and a PhD degree in electrical engineering from Stony Brook University in New York in 2006.
Hermann Kohlstedt
Guest Editor for this issue of MRS Bulletin
Institute of Electrical and Information Engineering, Christian-Albrechts-Universität zu Kiel, Kaiserstraße 2, 24143 Kiel, Germany; tel. 0431-880-6075; and email [email protected].
Kohlstedt is a professor of nanoelectronics with the technical faculty at Christian-Albrechts University (CAU) Kiel, Germany. Prior to his appointment at CAU, he led a research group from 1991 to 2009 at the Research Center Jülich that focused on advanced electronic device concepts and associated materials-processing issues. From 1986 to 1989, he worked at the Institute for Millimeterwave Radiostronomy (IRAM) in Grenoble, France, and received his PhD degree in physics from Kassel University in 1989. From 1990 to 1991, he held an appointment at the Advantest Corp. in Sapporo, Japan. Kohlstedt’s representative work includes superconducting, magnetic, and ferroelectric tunnel junctions in the framework of transport properties and thin-film analysis. He has authored and co-authored more than 140 papers.
Agnès Barthélémy
Unité Mixte de Physique CNRS/Thales; and email [email protected].
Barthélémy is a professor at the University of Paris-Sud, France. She is leading the multifunctional oxides group at the joint CNRS/Thales Laboratory in Palaiseau, France. Her research interests include the physics of such oxides and their integration in spintronics architectures. Currently, she is a senior member of the Institut Universitaire de France (IUF). She received the Louis Ancel Prize of the French Physical Society in 2008 and the Silver Medal of CNRS in 2010.
Manuel Bibes
Unité Mixte de Physique CNRS/Thales; and email [email protected].
Bibes received his PhD degree in 2001 from the Universitat Autònoma de Barcelona and the INSA Toulouse. Following two years of postdoctoral work in A. Fert’s group in Orsay, he became a CNRS researcher in 2003. In 2007, he joined the CNRS/Thales lab to develop research lines on multiferroics, oxide interfaces, and ferroic tunnel junctions. He is the co-author of more than 90 articles in international journals and of 40 invited talks.
Yong Chen
University of California, Los Angeles, USA; and email [email protected].
Chen is currently a professor in the Departments of Materials Science and Engineering, and Mechanical and Aerospace Engineering at the University of California, Los Angeles. Before he joined UCLA in 2003, he worked as a research scientist in quantum science research at Hewlett-Packard Laboratories. He obtained his PhD degree in Materials Science and Engineering from the University of California, Berkeley in 1996. His research focuses on nanofabrication, intelligent electronics, and nanobiotechnology.
Vincent Garcia
Unité Mixte de Physique CNRS/Thales (UMR137), France; tel. +33 1 69 41 58 59; and email [email protected].
Garcia graduated from the Université Paris VI, France with a PhD degree in materials science in 2006. In 2007, he joined the group of Neil Mathur, Cambridge University, UK, as a post-doc. Since 2009, he is a research scientist at the Unité Mixte de Physique CNRS/Thales, France. His research interests include transport properties of spintronics devices and physics of ferroic tunnel junctions. He has co-authored 20 publications in international journals and presented 10 invited talks.
Alexei Gruverman
University of Nebraska, Lincoln, USA; and email [email protected].
Gruverman is an associate professor in the Department of Physics and Astronomy at the University of Nebraska, Lincoln. His research interests are in the field of scanning probe microscopy of functional materials, nanoscale phenomena in ferroelectrics, non-volatile information storage technologies, and electromechanical phenomena in biological systems. Prior to joining UNL, he held a research professorship position at North Carolina State University and research scientist positions at Sony Corporation, Yokohama, Japan, and the Joint Research Center for Atom Technology in Tsukuba, Japan. He has co-authored over 100 research papers, published a number of book chapters and review articles, presented over 80 communications in scientific meetings, and has edited three books and several special journal issues on ferroelectricity. He is a recipient of the 2004 Ikeda Foundation Award and ISIF 2010 Outstanding Achievement Award.
Cheol Seong Hwang
Department of Materials Science and Engineering, School of Engineering, Seoul National University, Korea; tel. +82-2-880-7535; and email [email protected].
Hwang received his BS, MS, and PhD degrees from Seoul National University, Seoul, Korea, in 1987, 1989, and 1993, respectively. He served as a guest scientist for his postdoctoral research work at the National Institute of Standards and Technology, USA. Then, he joined Samsung electronics, where he developed DRAM and FeRAM for ~4 years. Since 1998, he has been a professor in the department of material science and engineering at Seoul National University. He has authored or co-authored more than 340 papers in international peer-reviewed scientific journals, which have been cited more than 6,100 times. His current interests include high-κ gate oxide for logic devices, DRAM, new memory devices including PRAM/RRAM, and ferroelectric materials/devices and thin-film transistors. He is also the recipient of the 7th Presidential Young Scientist Award of Korea.
Daniele Ielmini
Dipartimento di Elettronica e Informazione—Politecnico di Milano, 20133 Milano, Italy; tel. +39 02 2399 6120; and email [email protected].
Ielmini is an associate professor at the Dipartimento di Elettronica e Informazione, Politecnico di Milano. He received his PhD degree in nuclear engineering from Politecnico di Milano in 2000. He held visiting positions at Intel Corporation (2006), Stanford University (2006), and the University of Illinois at Urbana-Champaign (2010). He has worked on the modeling of leakage current in silicon dioxide and the reliability of flash and nanocrystal memories. His current research interest is the device modeling of emerging non-volatile memories, such as phase change memory and resistive switching memory. He has authored/co-authored two book chapters and over 150 articles, and holds three patents.
Isao H. Inoue
AIST Central 4, Tsukuba 305-8562, Japan; tel. +81-90-6494-0091; and email [email protected].
Inoue is a senior researcher at the National Institute of Advanced Industrial Science and Technology (AIST). He received his BSc, MSc, and DSc degrees in physics from the University of Tokyo in 1990, 1992, and 1998, respectively. From 1999 to 2001, he was a visiting scholar at Cavendish Laboratory, University of Cambridge. His h-index is 21, with more than 60 papers in international scientific journals and more than 1,600 citations. His research interests include the high-energy spectroscopy and fermiology of strongly correlated materials and the physics of the Mott transistor and ReRAM.
Doo Seok Jeong
Korea Institute of Science and Technology, Seoul, South Korea; and email [email protected].
Jeong is a senior scientist at the Korea Institute of Science and Technology (KIST). He received his PhD degree in materials science from RWTH Aachen, Germany, in 2008. Since 2008, he has worked for KIST. His research area includes the theoretical description of point defect dynamics in various transition metal oxide thin films and electrochemical reactions at the nanoscale.
Ilya Karpov
Intel Corporation, Santa Clara, California, 95054, USA; tel. 408-765-5009; and email [email protected].
Karpov is a staff engineer at Intel Corporation. He has worked on process development and integration for logic and memory products. Since 2002, he has been working on the development of novel non-volatile memories. He has co-authored a number of publications and holds more than 20 patents. Ilya is a senior member of IEEE, member of MRS, and a member of the technical committee for NVMTS symposium. He has a PhD degree in materials science and engineering from the Chemical Engineering and Materials Science Department, University of Minnesota. He has previously worked at the Solid State Department of the Institute of Physics, Russian Academy of Science, Moscow, Russia.
Michael N. Kozicki
Arizona State University, USA; and email [email protected].
Kozicki is a professor of electrical engineering in the School of Electrical, Computer, and Energy Engineering at Arizona State University. Kozicki is also the chief scientist for CBRAM developer Adesto Technologies; visiting professor at the University of Edinburgh, Scotland; and adjunct professor at the Gwangju Institute of Science and Technology in Korea. His research interests include nanoionics, low-energy memory, dendritic electrodes, and MEMS, and he holds more than 40 U.S. and 30 international patents in these areas. He received BSc and PhD degrees from the University of Edinburgh and holds the professional designation of Chartered Engineer (C.Eng).
Takhee Lee
Department of Physics and Astronomy, Seoul National University, Korea; and email [email protected].
Lee is a faculty member in the Department of Physics and Astronomy, Seoul National University, Korea. He graduated from Seoul National University, Korea, and received his PhD degree from Purdue University in 2000. He was a postdoctoral researcher at Yale University until 2004, and he was a professor at the Gwangju Institute of Science and Technology, Korea, from 2004 until 2011. His current research interests are molecular electronics, polymer memory devices, nanowire electronics, and graphene-electrode optoelectronic devices. He has written nine book chapters, eight review articles, and 140 journal articles.
Wei Lu
University of Michigan, USA; and email [email protected].
Lu is an associate professor in the Electrical Engineering and Computer Science Department at the University of Michigan—Ann Arbor. He received his BS degree in physics from Tsinghua University, Beijing, China, in 1996, and a PhD degree in physics from Rice University, Houston, TX, in 2003. From 2003 to 2005, he was a postdoctoral research fellow at Harvard University, Cambridge, MA. He joined the faculty of UM in 2005. His research interests include high-density memory and logic devices based on two-terminal resistive switches (memristors), semiconductor nanowire electronics, and electrical transport in low-dimensional systems. He is a co-editor-in-chief of Nanoscale, a member of the ITRS Emerging Research Device working group, and a recipient of the NSF CAREER Award.
Thomas Mikolajick
Namlab gGmbH/TU Dresden, Noethnitzer Str. 64, 01187 Dresden, Germany; tel. +49-351-21-24-990-20; and email [email protected].
Mikolajick received his diploma (Dipl.-Ing.) in electrical engineering in 1990 and his PhD degree in 1996, both from the University of Erlangen-Nuremberg. He then began work in the semiconductor industry, first at Siemens Semiconductor and later at Infineon and Qimonda. Since 1999, his work has focused on nonvolatile memories (flash, FeRAM, MRAM, and RRAM). In 2009, he started at the University of Technology in Dresden, where he is a professor of nanoelectronic materials. He also serves as the scientific director at NaMLab GmbH. Mikolajick is an author or co-author of 80 publications and is the inventor or co-inventor on about 50 patents.
Simone Raoux
IBM T.J. Watson Research Center, NY 10598, USA; tel. 914-945-1656; and email [email protected].
Raoux is a research staff member at the IBM T.J. Watson Research Center. She received her MS degree in 1984 and PhD degree in 1988 both in physics from Humboldt University, Berlin, Germany. Her previous research included electrical breakdown, vacuum arc deposition, ion implantation, photoemission electron microscopy, x-ray magnetic circular dichroism, and near-edge x-ray absorption fine structure spectroscopy. Her current research interest is on the physics and materials science of phase change materials. She is an author or coauthor of more than 100 journal articles, holds eight patents, and recently co-edited a book on phase change materials.
Evgeny Y. Tsymbal
University of Nebraska, Lincoln, USA; and email [email protected].
Tsymbal is a Charles Bessey Professor in the Department of Physics and Astronomy at the University of Nebraska-Lincoln (UNL) and the director of the UNL’s Materials Research Science and Engineering Center (MRSEC). Prior to his appointment at UNL, he was a senior research scientist at the University of Oxford, United Kingdom, a research fellow of the Alexander von Humboldt Foundation at the Research Center-Jülich, Germany, and a research scientist at the Russian Research Center “Kurchatov Institute.” Tsymbal’s research is focused on the computational materials science of advanced ferromagnetic and ferroelectric thin-film structures relevant to nanoelectronics and spintronics. He is a fellow of the American Physical Society, a fellow of the Institute of Physics, UK, and a recipient of the UNL’s College of Arts & Sciences Outstanding Research and Creativity Award.
Rainer Waser
Forschungszentrum Jülich, Germany; and email [email protected].
Waser received his PhD degree in physical chemistry at the University of Darmstadt in 1984. He worked at the Philips Research Laboratory, Aachen, until he was appointed professor in the Electrical Engineering and Information Technology Department of RWTH Aachen University in 1992 and later director at the Institute of Solid State Research (IFF) at the Forschungszentrum Jülich in 1997. He is a member of the Emerging Research Devices working group of the ITRS and has been collaborating with major semiconductor industries in Europe, the United States, and the Far East. Since 2002, he has been the coordinator of the research program Nanoelectronic Systems within the Germany national research centers in the Helmholtz Association. In 2007, he became a co-founder of the Jülich-Aachen Research Alliance section of Fundamentals of Future Information Technology (JARA-FIT).
Matthias Wuttig
Institute of Physics (IA) – RWTH Aachen University, Postfach, D-52056 Aachen; tel. +49 241 80 27155; and email [email protected].
Wuttig is a full professor in the Department of Physics, RWTH Aachen University, Germany and is a JARA-professor (RWTH Aachen/FZ Jülich). He received his PhD degree in 1988 and has held visiting positions at Lawrence Berkeley Laboratory, USA (1990/91 and 2010); CRMC2 - CNRS Marseille, France (1995); Zhejiang University, Hangzhou, China (1998); Kenyatta University, Nairobi, Kenia (1999); IBM Almaden Research Center, USA (2005); Data Storage Institute (DSI) Singapore (2007); Shanghai Institute of Microsystems and Information, Chinese Academy of Sciences (2008); and Global Climate and Energy Project at Stanford University, CA, USA (2010). His research interest focuses on materials with novel optical and electronic properties.
J. Joshua Yang
Hewlett Packard Laboratories, CA, 94304, USA; tel. +1-650-857-4243; and email [email protected].
Yang is a senior scientist at Hewlett-Packard Labs. He obtained his PhD degree in materials science from the University of Wisconsin—Madison in 2006. His research interest is in nanoelectronics, where he has authored and co-authored over 100 papers in academic journals and conferences. He also holds 4 granted and over 60 pending U.S. patents. He is a co-editor of Applied Physics A.
