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The UV-induced positive and negative refractive index changes in GeO2-SiO2 films

Published online by Cambridge University Press:  26 October 2005

L. T. Zhang ,
J. Wang ,
W. F. Xie ,
Y. Hou ,
J. Zheng ,
W. Zheng  and
Y. S. Zhang
L. T. Zhang*
Affiliation:
National Integrated Optoelectronics Laboratory, Jilin University, Changchun, 130012, P.R. China
J. Wang
Affiliation:
Department of Physics, Jilin University, Changchun, 130023, P.R. China Editorial Department of Journal of Jilin University (Science Edition), Jilin University, Changchun, 130023, P.R. China
W. F. Xie
Affiliation:
National Integrated Optoelectronics Laboratory, Jilin University, Changchun, 130012, P.R. China
Y. Hou
Affiliation:
National Integrated Optoelectronics Laboratory, Jilin University, Changchun, 130012, P.R. China
J. Zheng
Affiliation:
National Integrated Optoelectronics Laboratory, Jilin University, Changchun, 130012, P.R. China
W. Zheng
Affiliation:
National Integrated Optoelectronics Laboratory, Jilin University, Changchun, 130012, P.R. China
Y. S. Zhang
Affiliation:
National Integrated Optoelectronics Laboratory, Jilin University, Changchun, 130012, P.R. China
*
[email protected]
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Abstract

xGeO2-(1-x)SiO2 films ( $0.1\le x\le 0.4$ ) were deposited by flame hydrolysis deposition (FHD) on Si substrates and annealed to 1150 °C for 2 h for consolidation in air. Then the films were irradiated perpendicularly to KrF excimer laser after being hydrogen loaded to enhance the photosensitivity to UV light. X-ray photoelectron spectroscopy (XPS) was used in order to characterize the purity of the films. The film was also studied using atomic force microscopy (AFM) to determine the analytical details of the microstructure. Film thickness and refractive index were measured by variable angle spectroscopic ellipsometry (VASE). The maximum positive 0.339% and negative 0.235% refractive index changes at 1550 nm were obtained after irradiation.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 32 , Issue 2 , November 2005 , pp. 105 - 108
Copyright
© EDP Sciences, 2005

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