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The use of neighbourhood intensity comparisons, morphological gradients and Fourier analysis for automated precipitate counting & Pendellösung fringe analysis in X-ray topography

Published online by Cambridge University Press:  15 July 2004

G. Murphy ,
P. F. Whelan ,
P. J. McNally ,
T. Tuomi  and
R. Simon
G. Murphy
Affiliation:
Vision Systems Group, Research Institute for Networks & Communications Engineering (RINCE), Dublin City University, Dublin 9, Ireland
P. F. Whelan
Affiliation:
Vision Systems Group, Research Institute for Networks & Communications Engineering (RINCE), Dublin City University, Dublin 9, Ireland
P. J. McNally*
Affiliation:
Microelectronics Group, RINCE, Dublin City University, Dublin 9, Ireland
T. Tuomi
Affiliation:
Optoelectronics Laboratory, Helsinki University of Technology, PO Box 3500, 02015 TKK, Espoo, Finland
R. Simon
Affiliation:
Institute für Synchrotronstrahlung (ISS), Forschungszentrum Karlsruhe GmbH, Postfach 3640, D-76021 Karlsruhe, Germany
*
[email protected]
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Abstract

Crystal distortions modify the propagation of X-rays in single crystal materials, and X-ray topography can be used to record these modifications on a film thus providing images of the distributions and nature of defects, dislocations, strains, precipitates, etc. in semiconductors. Small variations of contrast, which often need to be analysed can be rendered invisible. Furthermore, artefacts in the films must be removed. This study examines the use of advanced image analysis techniques applied to a selection of X-ray topographs in section transmission mode: (i) the automated counting of oxygen-related precipitates and (ii) the enhancement of Pendellösung fringes. The technique also succeeds in removing unwanted features in the original x-ray topographs such as vertical streaking due to collimating slit phase contrast and strain features near the surface due to the presence of integrated circuit process strains.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 443 - 446
Copyright
© EDP Sciences, 2004

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