Hostname: page-component-6bf8c574d5-mcfzb Total loading time: 0 Render date: 2025-03-07T07:25:10.361Z Has data issue: false hasContentIssue false
  • English
  • Français

The transport mechanism of gate leakage current in AlGaN/GaN high electron mobility transistors

Published online by Cambridge University Press:  18 August 2011

D.F. Lin ,
X.L. Wang ,
H.L. Xiao ,
C.M. Wang ,
L.J. Jiang ,
C. Feng ,
H. Chen ,
Q.F. Hou ,
Q.W. Deng  and
Y. Bi
...Show all authors
D.F. Lin*
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
X.L. Wang
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, P.O. Box 912, Beijing 100083, P.R. China
H.L. Xiao
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
C.M. Wang
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
L.J. Jiang
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
C. Feng
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
H. Chen
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Q.F. Hou
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Q.W. Deng
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Y. Bi
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
H. Kang
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
*
ae-mail: [email protected]
Get access

Abstract

The temperature dependence of the I-V characteristics on Au/Ni-HEMT Schottky contacts was measured and analyzed. Large deviations from the thermionic emission and thermionic-field emission model were observed in the I-V-T characteristics. The thin surface barrier model only fits the measured curves in the high bias region, but deviates drastically in the low bias region. Using a revised thin surface barrier model, the calculated curves match well with the measured curves. It is also found that tunneling emission model is the dominant current transport mechanism at low temperature, yet thermionic-field emission model is the dominant current transport mechanism at high temperature.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 55 , Issue 3 , September 2011 , 30104
Copyright
© EDP Sciences, 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Miyajima, T., Watanabe, H., Ikeda, M., Yokoyama, H., Appl. Phys. Lett. 94, 161103 (2009)10.1063/1.3106055CrossRef
Wang, X.L. et al., Solid State Electron. 53, 332 (2009)10.1016/j.sse.2009.01.003CrossRef
Kim, T.K., Kim, S.H., Yang, S.S., Son, J.K., Lee, K.H., Hong, Y.G., Shim, K.H., Yang, J.W., Lim, K.Y., Bae, S.J., Yang, G.M., Appl. Phys. Lett. 94, 161107 (2009)10.1063/1.3120222CrossRef
Kim, B.J., Ryu, Y.R., Lee, T.S., White, H.W., Appl. Phys. Lett. 94, 103506 (2009)CrossRef
Adivarahan, V., Simin, G., Yang, J.W., Lunev, A., Kahn, M.A., Pala, N., Shur, M., Gaska, R., Appl. Phys. Lett. 77, 863 (2000)10.1063/1.1306647CrossRef
Guo, J.D., Pan, F.M., Feng, M.S., Guo, R.J., Chou, P.F., Chang, C.Y., J. Appl. Phys. 80, 1623 (1996)10.1063/1.363822CrossRef
Lin, Y.-J., J. Appl. Phys. 105, 084502 (2009)
Yu, L.S., Liu, Q.Z., Qiao, Q.J., Lau, S.S., Redwing, J., Appl. Phys. Lett. 84, 2099 (1998)
Hasegawa, H., Oyama, S., J. Vac. Sci. Technol. B 20, 4 (2002)10.1116/1.1491539CrossRef
Sze, S.M., Semicond. Devices Phys. Technol. (Suzhou University, Suzhou, 2002) [in Chinese]
Rhoderick, E.H., Williams, R.H., Metal-Semiconductor Contacts, 2nd edn. (Clarendon, Oxford, 1988)Google Scholar
Gaska, R., Yang, J.W., Osinsky, A., Bykhovski, A.D., Shur, M.S., Appl. Phys. Lett. 71, 25 (1997)
Miller, E.J., Dang, X.Z., Yu, E.T., J. Appl. Phys. 88, 10 (2000)10.1063/1.1319972CrossRef
Noor Mohammad, S., J. Appl. Phys. 97, 063703 (2005)10.1063/1.1856226CrossRef
Lee, M.L., Sheu, J.K., Lin, S.W., Appl. Phys. Lett. 88, 032103 (2006)10.1063/1.2166477CrossRef
VandeWalle, C.G., Properties of Gallium Nitride and Related Seimconductors (INSPEC, London, 1999)Google Scholar