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Titanium carbide film deposition on silicon wafers by pulsed KrF laser ablationof titanium in low-pressure CH4 and C2H2 atmospheres

Published online by Cambridge University Press:  25 August 2004

E. D'Anna ,
M. Fernández ,
G. Leggieri ,
A. Luches ,
A. Zocco  and
G. Majni
E. D'Anna
Affiliation:
INFM and Università di Lecce, Dipartimento di Fisica, 73100 Lecce, Italy
M. Fernández*
Affiliation:
INFM and Università di Lecce, Dipartimento di Fisica, 73100 Lecce, Italy
G. Leggieri
Affiliation:
INFM and Università di Lecce, Dipartimento di Fisica, 73100 Lecce, Italy
A. Luches
Affiliation:
INFM and Università di Lecce, Dipartimento di Fisica, 73100 Lecce, Italy
A. Zocco
Affiliation:
INFM and Università di Lecce, Dipartimento di Fisica, 73100 Lecce, Italy
G. Majni
Affiliation:
INFM and Università di Ancona, Dipartimento di Fisica e Ingegneria dei Materiali e del Territorio, 60131 Ancona, Italy
*
[email protected]
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Abstract

We report on the deposition of thin titanium carbide films on 60 mm and 100 mm Si wafers by KrF laser ablation of titanium targets in low-pressure (0.1 Pa) CH4 and C2H2 atmospheres, and on their characterization. The targets were titanium foils (purity 99.6%). Si (111) wafers, 60 and 100 mm in diameter, were used as substrates. Film characteristics (thickness, composition and crystalline structure) were studied as a function of the carbon-containing gas (C2H2 or CH4), laser fluence (4 or 6 J/cm2), substrate temperature (20 or 250 °C) and target-to-substrate distance (70–120 mm). Continuous, well adhesive polycrystalline TiC films were deposited even without any heating of the substrate. Films deposited in C2H2 ambient atmosphere are better crystallized and less prone to surface oxidation with respect to films deposited in CH4 atmosphere, in otherwise identical conditions.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 28 , Issue 2 , November 2004 , pp. 159 - 163
Copyright
© EDP Sciences, 2004

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