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Thermoelectric properties of Czochralski-grown silicon at high pressure up to 16 GPa

Published online by Cambridge University Press:  15 July 2004

V. V. Shchennikov ,
S. V. Gudina ,
A. Misiuk ,
S. N. Shamin  and
S. V. Ovsyannikov
V. V. Shchennikov*
Affiliation:
Institute of Metal Physics, Ural Division of RAS, GSP-170, Yekaterinburg, 620219, Russia
S. V. Gudina
Affiliation:
Institute of Metal Physics, Ural Division of RAS, GSP-170, Yekaterinburg, 620219, Russia
A. Misiuk
Affiliation:
Institute of Electron Technology, Al. Lotnikow 32/46, PL-02-668 Warsaw, Poland
S. N. Shamin
Affiliation:
Institute of Metal Physics, Ural Division of RAS, GSP-170, Yekaterinburg, 620219, Russia
S. V. Ovsyannikov
Affiliation:
Institute of Metal Physics, Ural Division of RAS, GSP-170, Yekaterinburg, 620219, Russia
*
[email protected]
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Abstract

The thermoelectric power of silicon micro-samples grown by Czochralski method (Cz-Si) and annealed at 450 °C has been investigated at enhanced pressure up to 16 GPa. The correlation has been established between the thermoelectric power and pressure of the semiconductor-metal phase transition, on the one hand, and mechanical properties (microhardness, compressibility), on the other, for Cz-Si with different content of oxygen. Possible application of the studied properties for micro-device technology is discussed.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 145 - 148
Copyright
© EDP Sciences, 2004

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