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Synthesis, microstructure, and properties of Ge1-xCox diluted magnetic semiconductor films

Published online by Cambridge University Press:  28 January 2011

C. B. Jing ,
W. Wang ,
T. Lin ,
C. Y. Cao  and
J. H. Chu
C. B. Jing*
Affiliation:
College of Materials Science and Technology, Qingdao University of Science and Technology, 53 Zheng-zhou Road, Qingdao, 266042, P.R. China National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, P.R. China
W. Wang
Affiliation:
College of Materials Science and Technology, Qingdao University of Science and Technology, 53 Zheng-zhou Road, Qingdao, 266042, P.R. China
T. Lin
Affiliation:
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, P.R. China
C. Y. Cao
Affiliation:
Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, 500 Dong-Chuan Road, Shanghai, 200241, P.R. China
J. H. Chu
Affiliation:
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, P.R. China Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, 500 Dong-Chuan Road, Shanghai, 200241, P.R. China
*
[email protected]
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Abstract

Co-doped GeO2 ceramic films were prepared via a liquid phase co-deposition (LPCD) process. The oxide samples were transformed into Ge1-xCox films (x = 0.75, 3.2 and 11.5%) after annealing under hydrogen atmosphere. The crystallinity of Ge1-xCox film decreases with increasing Co content. The Ge1-xCox films are p-type (hole density 1020 ~ 1021 cm-3). The 3.2% film has higher electrical conductivity and hole density compared with the other two samples. The 0.75% film is superparamagnetic at 300 K while the 3.2% and 11.5% films exhibit blocked superparamagnetic behaviors. Hysteresis loops can be observed in the magnetization curves of the 3.2 and 11.5% samples. The observed ferromagnetisms are on only a local (a few nanometers) scale, which most likely arise from different size and chemical distribution in every sample.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 53 , Issue 2 , February 2011 , 20304
Copyright
© EDP Sciences, 2011

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References

Wolf, S.A., Awschalom, D.D., Buhrman, R.A., Daughton, J.M., von Molnár, S., Roukes, M.L., Chtchelkanova, A.Y., Treger, D.M., Science 294, 1488 (2001) CrossRef
Dietl, T., Ohno, H., Matsukura, F., Cibert, J., Ferrand, D., Science 287, 1019 (2000) CrossRef
Ohno, H., Science 281, 951 (1998) CrossRef
Dietl, T., Ohno, H., Matsukura, F., Phys. Rev. Lett. B 63, 195205 (2001) CrossRef
Yoshihito Maeda, , Phys. Rev. B 51, 1658 (1995) CrossRef
Pinto, N., Morresi, L., Ficcadenti, M., Murri, R., F'Orazio, D., Lucari, F., Boarino, L., Amato, G., Phys. Rev. B 72, 165203 (2005) CrossRef
Jamet, M., Barski, A., Devillers, T., Poydenot, V., Dujardin, R., Bayle-Guillemaud, P., Rothman, J., Bellet-Amalric, E., Marty, A., Cibert, J., Nat. Mater. 5, 653 (2006) CrossRef
Woodbury, H.H., Tyler, W.W., Phys. Rev. Lett. 100, 659 (1955)
Choi, S., Hong, S.C., Cho, S., Kim, Y., Ketterson, J.B., Jung, C.U., Rhie, K., Kim, B.J., Kim, Y.C., J. Appl. Phys. 93, 7670 (2003) CrossRef
Ko, V., Teo, K.L., Liew, T., Chong, T.C., Appl. Phys. Lett. 89, 042504 (2006) CrossRef
Cho, Y.J., Kim, C.H., Kim, H.S., Lee, W.S., Park, S.H., Park, J.H., Chem. Mater. 20, 4694 (2008) CrossRef
Park, Y.D., Hanbicki, A.T., Erwin, S.C., Hellberg, C.S., Sullivan, J.M., Mattson, J.E., Ambrose, T.F., Wilson, A., Spanos, G., Jonker, B.T., Science 295, 651 (2002) CrossRef
Cho, S., Choi, S., Hong, S.C., Kim, Y., Ketterson, J.B., Kim, B.J., Kim, Y.C., Jung, J.H., Phys. Rev. Lett. B 66, 033303 (2002) CrossRef
D'Orazio, F., Lucari, F., Passacantando, M., Picozzi, P., Santucci, S., Verna, A., IEEE Trans. Magn. 38, 2856 (2002) CrossRef
Jing, C.B., Xu, X.G., Hou, J.X., J. Sol-Gel Sci. Technol. 45, 109 (2008) CrossRef
Jing, C.B., Hou, J.X., Zhang, Y.H., J. Cryst. Growth 310, 391 (2008) CrossRef
Bogle, K.A., Ghosh, S., Dhole, S.D., Bhoraskar, V.N., Fu, L.-F., Chi, M.-F., Browning, N.D., Kundaliya, D., Das, G.P., Ogale, S.B., Chem. Mater. 20, 440 (2008) CrossRef
Tsui, F., He, L., Ma, L., Tkachuk, A., Chu, Y.S., Nakajima, K., Chikyow, T., Phys. Rev. Lett. 91, 177203 (2003) CrossRef
Tsui, F., He, L., Tkachuk, A., Vogt, S., Chu, Y.S., Phys. Rev. Lett. B 69, 081304 (2004) CrossRef
Thaler, G., Frazier, R., Gila, B., Stapleton, J., Davidson, M., Abernathy, C.R., Pearton, S.J., Segre, C., Appl. Phys. Lett. 84, 1314 (2004) CrossRef
Yan, X., Yu, Y., J. Synt. Cryst. 35, 4 (2006)
Liu, J.L., Jin, G., Tang, Y.S., Luo, Y.H., Wang, K.L., Appl. Phys. Lett. 76, 586 (2000) CrossRef
Liu, J.L., Wan, J., Jiang, Z.M., Khitun, A., Wang, K.L., Yu, D.P., J. Appl. Phys. 92, 6804 (2002) CrossRef
Tsui, F., He, L., Ma, L., Tkachuk, A., Chu, Y.S., Nakajima, K., Chikyow, T., Phys. Rev. Lett. 91, 17 (2003) CrossRef
Niu, X.J., Dalal, V.L., J. Appl. Phys 98, 096103-1 (2005) CrossRef
De Padova, P., Ayoub, J.-P., Berbezier, I., Perfetti, P., Quaresima, C., Testa, A.M., Fiorani, D., Olivieri, B., Mariot, J.-M., Taleb-Ibrahimi, A., Richter, M.C., Heckmann, O., Hricovini, K., Phys. Rev. B 77, 045203 (2008) CrossRef
S.Q. Zhou, K. Potzger, G. Talut, J. von Borany, W. Skorupa, M. Helm, J. Fassbender, J. Appl. Phys. 103, 07D530 (2008)
Ney, A., Materials 3, 3565 (2010) CrossRef
Kazakova, O., Morgunov, R., Kulkarni, J., Holmes, J., Ottaviano, L., Phys. Rev. B 77, 235317 (2008) CrossRef
De Padova, P., Ayoub, J.-P., Berbezier, I., Perfetti, P., Quaresima, C., Testa, A.M., Fiorani, D., Olivieri, B., Mariot, J.-M., Taleb-Ibrahimi, A., Richter, M.C., Heckmann, O., Hricovini, K., Phys. Rev. B 77, 045203 (2008) CrossRef
Chen, C.C., Hsu, Y.J., Lin, Y.F., Lu, S.Y., J. Phys. Chem. C 112, 17964 (2008) CrossRef
Li, A.P., Wendelken, J.F., Shen, J., Feldman, L.C., Thompson, J.R., Weitering, H.H., Phys. Rev. B 72, 195205 (2005) CrossRef
J.L. Moll, Physics of Semiconductors (McGraw-Hill, Book Company, Inc., 1964)
Bougeard, D., Ahlers, S., Trampert, A., Sircar, N., Abstreiter, G., Phys. Rev. Lett. 97, 237202 (2006) CrossRef
Dietl, T., Nat. Mater. 5, 673 (2006) CrossRef
Chen, J.J., Wang, K.L., Galatsis, K., Appl. Phys. Lett. 90, 012501 (2007) CrossRef
De Padova, P., Ayoub, J.-P., Berbezier, I., Perfetti, P., Quaresima, C., Testa, A.M., Fiorani, D., Olivieri, B., Mariot, J.-M., Taleb-Ibrahimi, A., Richter, M.C., Heckmann, O., Hricovini, K., Phys. Rev. B 77, 045203 (2008) CrossRef
Yoon, S.W., Cho, S.-B., We, S.C., Yoon, S., Suh, B.J., Song, H.K., Shin, Y.J., J. Appl. Phys. 93, 10 (2003)
Choi, S., Hong, S.C., Cho, S., Kim, Y., Kim, B.J., Kim, Y.C., Appl. Phys. Lett. 81, 19 (2002)
Continenza, A., Profeta, G., Picozzi, S., Phys. Rev. Lett. B 73, 035212 (2006) CrossRef
Mounkachi, O., Benyoussef, A., El Kenz, A., Saidi, E.H., Hlil, E.K., Physica A 388, 3433 (2009) CrossRef
Continenza, A., Profeta, G., Picozzi, S., Phys. Rev. B 73, 035212 (2006) CrossRef
Jing, C.B., Jiang, Y.J., Bai, W., Chu, J.H., Liu, A.Y., J. Magn. Magn. Mater. 332, 2395 (2010) CrossRef