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Suppression of the “notch effect” in microwave surface resistance in YBa2Cu3O7 films on MgO (100) substrate by deposition of ultra-thin SrTiO3 seed layers

Published online by Cambridge University Press:  15 January 1999

J.-P. Contour ,
C. Couvert ,
O. Durand ,
Y. Lemaître ,
R. Lyonnet  and
B. Marcilhac
J.-P. Contour
Affiliation:
Unité Mixte de Physique CNRS / Thomson-CSF, 91404 Orsay, France
C. Couvert
Affiliation:
Unité Mixte de Physique CNRS / Thomson-CSF, 91404 Orsay, France
O. Durand
Affiliation:
LCR / Thomson-CSF, 91404 Orsay, France
Y. Lemaître
Affiliation:
Unité Mixte de Physique CNRS / Thomson-CSF, 91404 Orsay, France
R. Lyonnet
Affiliation:
Unité Mixte de Physique CNRS / Thomson-CSF, 91404 Orsay, France
B. Marcilhac
Affiliation:
Unité Mixte de Physique CNRS / Thomson-CSF, 91404 Orsay, France
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Abstract

RHEED controlled ultra-thin buffer layers of SrTiO3 have been deposited on (100) MgO by pulsed laser deposition to growth YBaCuO films for microwave applications. A buffer layer with a thickness between 2 and 15 nm, i.e. 5 to 40 unit cells of SrTiO3, is sufficient to expand to more than 60 °C the range of deposition temperatures leading to low microwave surface resistance. The Rs values are as good as those obtained on LaAlO3 substrates with a slighly lower magnetic field dependency. The SrTiO3 seed layer induces an oriented epitaxial growth with YBCO [100] // MgO [100] over this range of deposition temperatures.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 5 , Issue 1 , January 1999 , pp. 3 - 8
Copyright
© EDP Sciences, 1999

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