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Suppression of leakage currents in GaN-based LEDs inducedby reactive-ion etching damages

Published online by Cambridge University Press:  19 June 2008

M. Mosca ,
A. Castiglia ,
H.-J. Bühlmann ,
J. Dorsaz ,
E. Feltin ,
J.-F. Carlin  and
N. Grandjean
M. Mosca*
Affiliation:
École Polytechnique Fédérale de Lausanne (EPFL), Institute of Quantum Electronics and Photonics, 1015 Lausanne, Switzerland
A. Castiglia
Affiliation:
École Polytechnique Fédérale de Lausanne (EPFL), Institute of Quantum Electronics and Photonics, 1015 Lausanne, Switzerland
H.-J. Bühlmann
Affiliation:
École Polytechnique Fédérale de Lausanne (EPFL), Institute of Quantum Electronics and Photonics, 1015 Lausanne, Switzerland
J. Dorsaz
Affiliation:
École Polytechnique Fédérale de Lausanne (EPFL), Institute of Quantum Electronics and Photonics, 1015 Lausanne, Switzerland
E. Feltin
Affiliation:
École Polytechnique Fédérale de Lausanne (EPFL), Institute of Quantum Electronics and Photonics, 1015 Lausanne, Switzerland
J.-F. Carlin
Affiliation:
École Polytechnique Fédérale de Lausanne (EPFL), Institute of Quantum Electronics and Photonics, 1015 Lausanne, Switzerland
N. Grandjean
Affiliation:
École Polytechnique Fédérale de Lausanne (EPFL), Institute of Quantum Electronics and Photonics, 1015 Lausanne, Switzerland
*
[email protected]
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Abstract

Forward and reverse leakage currents in GaN/InGaN multi-quantum well light-emitting diodes (LEDs) are caused by reactive-ion etching (RIE) damages during device patterning. A method to recover the damaged surfaces, based on a chemical etch in KOH:ethylene-glycol is described. Leakage currents decrease of more than a factor of 10 and are completely suppressed in most of devices.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 43 , Issue 1 , July 2008 , pp. 51 - 53
Copyright
© EDP Sciences, 2008

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