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Study of traps in polydiacetylene based devices using TSC technique *

Published online by Cambridge University Press:  06 December 2006

C. Renaud ,
C. H. Huang ,
M. Zemmouri ,
P. LeRendu  and
T. P. Nguyen
C. Renaud*
Affiliation:
Université de Nantes, Institut des Matériaux Jean Rouxel, 2 rue de la Houssinière, 44322 Nantes Cedex 3, France
C. H. Huang
Affiliation:
Université de Nantes, Institut des Matériaux Jean Rouxel, 2 rue de la Houssinière, 44322 Nantes Cedex 3, France Department of Applied Chemistry, National Chiao Tung University, Hsinchu 300, Taiwan
M. Zemmouri
Affiliation:
Université de Nantes, Institut des Matériaux Jean Rouxel, 2 rue de la Houssinière, 44322 Nantes Cedex 3, France
P. LeRendu
Affiliation:
Université de Nantes, Institut des Matériaux Jean Rouxel, 2 rue de la Houssinière, 44322 Nantes Cedex 3, France
T. P. Nguyen
Affiliation:
Université de Nantes, Institut des Matériaux Jean Rouxel, 2 rue de la Houssinière, 44322 Nantes Cedex 3, France
*
[email protected]
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Abstract

Trap parameters in poly(1-(3,4-difluorophenyl)-2-(4-pentylcyclohexylphenyl)acetylene) (PDPA-2F) based devices have been investigated by using the thermally stimulated current (TSC) technique. The device structure is ITO-PEDOT-(PDPA-2F)-M, where M stands for the cathode metal (Al, Ca/Al, and Au). The results reveal at least three TSC peaks in devices denoted as peaks A, B and C. Comparing trap parameters in ITO-PEDOT-(PDPA-2F)-Au hole-only device and ITO-PEDOT-(PDPA-2F)-Ca Al (Al) bipolar devices, we assigned A and B trap types to hole-like traps and C type traps to electron-like traps. The trap densities are in the range of 1015−1017 cm−3 and the trap levels are 0.12 eV (A type traps), 0.36 eV (B type traps), and 0.25 eV (C type traps).

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 36 , Issue 3 , December 2006 , pp. 215 - 218
Copyright
© EDP Sciences, 2006

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Footnotes

*

This paper has been presented at “ECHOS06”, Paris, 28–30 juin 2006.

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