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Study of indium phosphide wafers treated by long time annealing at high temperatures

Published online by Cambridge University Press:  15 July 2004

K. Zdansky ,
L. Pekarek  and
P. Hlidek
K. Zdansky*
Affiliation:
Institute of Radio Engineering and Electronics, ASCR, Chaberska 57, 18251 Prague 8, Czech Republic
L. Pekarek
Affiliation:
Institute of Physics, ASCR, Na Slovance 2, 18221 Prague 8, Czech Republic
P. Hlidek
Affiliation:
Charles University, Institute of Physics, Ke Karlovu 5, 12116 Prague 2, Czech Republic
*
[email protected]
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Abstract

High purity InP crystals were grown by liquid encapsulated Czochralski method from undoped InP melt. Wafers from the grown crystals were annealed in phosphorus ambient for 95 hours at 950 °C and cooled slowly. Conversion to semi-insulating state by annealing was studied by temperature dependent Hall measurements and low temperature optical absorption spectroscopy.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 197 - 200
Copyright
© EDP Sciences, 2004

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