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Studies on transport properties of MoSe2−xTex single crystals

Published online by Cambridge University Press:  27 August 2013

Divyesh N. Bhavsar  and
Ashvinkumar R. Jani
Divyesh N. Bhavsar*
Affiliation:
Department of Physics, Sardar Patel University, Vallabh Vidyanagar 388120, Gujarat, India
Ashvinkumar R. Jani
Affiliation:
Department of Physics, Sardar Patel University, Vallabh Vidyanagar 388120, Gujarat, India
*
a e-mail: [email protected]
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Abstract

Single crystals of MoSe2−xTex (x = 0.25, 0.5, 1, 1.5, 1.75) were grown by chemical vapor transport technique. The stoichiometric composition of grown crystals was confirmed by energy dispersive X-ray spectroscopy. Transport properties like electrical resistivity, Seebeck co-efficient measurements at high temperature and Hall effect at room temperature were studied on these samples. The obtained results are discussed in details in this paper.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 63 , Issue 2 , August 2013 , 20101
Copyright
© EDP Sciences, 2013

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References

Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V., Kis, A., Nat. Nanotechnol. 6, 147 (2011)CrossRef
Zong, X., Yan, H., Wu, G., Ma, G., Wen, F., Wang, L., Li, C., J. Am. Chem. Soc. 130, 7176 (2008)CrossRef
Kasowski, R.V., Phys. Rev. Lett. 30, 1175 (1973)CrossRef
Coleman, J.N., et al., J. Mater. Sci. 331, 568 (2011)
He, J., Wu, K., Sa, R., Li, Q., Wei, Y., Appl. Phys. Lett. 96, 082504 (2010)CrossRef
Mak, K.F., Lee, C., Hone, J., Shanand, J., Heinz, T.F., Phys. Rev. Lett. 105, 136805 (2010)CrossRef
Rao, C.N.R., Nag, A., Eur. J. Inorg. Chem. 27, 4244 (2010)CrossRef
Splendiani, A., Sun, L., Zhang, Y., Li, T., Kim, J., Chim, C., Galli, G., Wang, F., Nano. Lett. 10, 1271 (2010)CrossRef
Shahar, C., Levi, R., Cohen, S.R., Tenne, R., J. Phys. Chem. Lett. 1, 540 (2010)CrossRef
Ramakrishna Matte, H.S.S., Gomathi, A., Manna, A.K., Late, D.J., Datta, R., Pati, S.K., Rao, C.N.R., Angew. Chem. 12, 24153 (2010)
Castellanos-Gomez, A., Agraït, N., Rubio-Bollinger, G., Appl. Phys. Lett. 96, 213116 (2010)CrossRef
Novoselov, K.S., Jiang, D., Schedin, F., Booth, T.J., Khotkevich, V.V., Morozov, S.M., Geim, A.K., Proc. Natl. Acad. Sci. U.S.A. 102, 10451 (2005)CrossRef
Li, Y.F., Zhou, Z., Zhang, S.B., Chen, Z.F., J. Am. Chem. Soc. 13, 016739 (2008)CrossRef
Lebègue, S., Eriksson, O., Phys. Rev. B. Condens. Matter. Mater. Phys. 79, 115409 (2009)CrossRef
Wilson, J.A., Yoffe, A.D., Adv. Phys. 1, 8193 (1969)
Beal, A.R., Knights, J.C., Liang, W.Y., J. Phys. C: Solid State Phys. 5, 3540 (1972)CrossRef
Liang, W.Y., J. Phys. C: Solid State Phys. 6, 551 (1973)CrossRef
Bougouma, M., Guel, B., Segato, T., Legma, J.B., Ogletree, M.-P.D., Bull. Chem. Soc. Ethiop. 22, 225 (2008)CrossRef
Zheng, X., Kuriyaki, H., Hirakawa, K., J. Phys. Soc. Jpn 58, 622 (1989)CrossRef
Jericho, M.H., Ott, H.R., Rice, T.J., Phys. C: Solid State Phys. 9, 1377 (1986)CrossRef
Lee, P.A., Physics and Chemistry of Materials with Layered Structures: Optical and Electrical Properties (Reidel, Dordrecht, 1976)Google Scholar
Evans, B.L., Hazelwood, R.A., Phys. Status Solidi. A 4, 181 (1971)CrossRef
Agarwal, M.K., Patel, P.D., Joshi, R.M., Bull. Mater. Sci. 9, 340 (1987)CrossRef
Bonnet, A., Conan, A., Speisser, M., Zoaeter, M., J. Phys. France 49, 803 (1988)CrossRef
Mohanchandra, K.P., Uchil, J., Thin Solid Films 305, 124 (1997)CrossRef
Harry, B.K., Bube, H., J. Appl. Phys. 44, 138 (1973)
Bletskan, D.I., J. Ovonic Res. 2, 138 (2006)