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Structural and optical characterization of a dispersion of nanocavities in a crystalline silicon matrix

Published online by Cambridge University Press:  15 July 2004

E. Leoni ,
R. El Bouyadi ,
L. Martinelli ,
G. Regula ,
E. Ntsoenzok ,
B. Pichaud  and
S Pizzini
E. Leoni*
Affiliation:
INFM and Department of Material Science, University of Milano-Bicocca, via Cozzi 53, 20125 Milano, Italy Lab. TECSEN UMR6122, Univ. Aix-Marseille III, 13397 Marseille Cedex 20, France
R. El Bouyadi
Affiliation:
Lab. TECSEN UMR6122, Univ. Aix-Marseille III, 13397 Marseille Cedex 20, France
L. Martinelli
Affiliation:
INFM and Department of Material Science, University of Milano-Bicocca, via Cozzi 53, 20125 Milano, Italy
G. Regula
Affiliation:
Lab. TECSEN UMR6122, Univ. Aix-Marseille III, 13397 Marseille Cedex 20, France
E. Ntsoenzok
Affiliation:
CERI-CNRS, 3 A rue de la Ferollerie, 45071 Orléans, France
B. Pichaud
Affiliation:
Lab. TECSEN UMR6122, Univ. Aix-Marseille III, 13397 Marseille Cedex 20, France
S Pizzini
Affiliation:
INFM and Department of Material Science, University of Milano-Bicocca, via Cozzi 53, 20125 Milano, Italy
*
[email protected]
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Abstract

FZ silicon samples were multi-implanted with He ions at energies ranging from 0.8 MeV to 1.9 MeV. The dose was 5×1016 He cm−2 for all high energies but 0.8 MeV (3×1016 He cm−2). After implantation, the wafers were submitted to different annealing processes in an Argon atmosphere (A samples: 900 °C and 700 °C for 2 h; B sample 550 °C for 14 h) to optimize both density and size of cavities in order to reach a structure potentially light emitting like that of porous silicon. The samples were studied by cross section transmission electron microscopy (XTEM) and photoluminescence spectroscopy. XTEM results showed that a very thick region containing cavities has been obtained by a multi step implantation and that an annealing at low temperature is sufficient to recover the implantation damage. PL spectra arising from different depths have been obtained. PL results confirm that silicon in the region containing the highest density of cavities remains crystalline with a sufficiently low defect density for optoelectronic applications.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 89 - 92
Copyright
© EDP Sciences, 2004

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