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Structural and electrical resistivity study of Mn-doped LaFe1-xMnxO3 (x ≤ 0.5) crystals

Published online by Cambridge University Press:  23 March 2012

Arfat Firdous  and
M.M. Ahmad
Arfat Firdous*
Affiliation:
Department of Physics, Department of Higher Education, Govt. Degree College, Handwara, Jammu & Kashmir, India
M.M. Ahmad
Affiliation:
Department of Physics, National Institute of Technology, Hazratbal, Srinagar 190006, Jammu & Kashmir, India
*
ae-mail: [email protected]
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Abstract

LaFe1-xMnxO3 (x ≤ 0.5) polycrystals have been prepared using solid-state reaction technique and characterized by X-ray diffraction and electrical transport. XRD data suggest orthorhombic structure for both pure and Mn-doped compositions with space group Pbnma. However, unit cell dimensions are found to decrease with increase in Mn concentration. Resistivity data have been fitted with variable range hopping (VRH) model, from which different parameters like density of state at Fermi level N(Ef), hopping energy (Eh), and hopping distance (Rh) were estimated. It was observed that substitution of Mn in the series leads to the increase in conductivity of the samples with conduction being controlled by the disorder-induced localization of charge carriers.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 58 , Issue 1 , April 2012 , 10101
Copyright
© EDP Sciences, 2012

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