Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-20T04:33:42.303Z Has data issue: false hasContentIssue false
  • English
  • Français

Stain-etched porous silicon nanostructures for multicrystalline silicon-based solar cells

Published online by Cambridge University Press:  23 December 2011

M. Ben Rabha ,
M. Hajji ,
S. Belhadj Mohamed ,
A. Hajjaji ,
M. Gaidi ,
H. Ezzaouia  and
B. Bessais
M. Ben Rabha*
Affiliation:
Laboratoire de PhotovoltaΪque, Centre de Recherches et des Technologies de l’Energie, Technopole de Borj-Cédria, BP 95, 2050 Hammam-Lif, Tunisia
M. Hajji
Affiliation:
Laboratoire de PhotovoltaΪque, Centre de Recherches et des Technologies de l’Energie, Technopole de Borj-Cédria, BP 95, 2050 Hammam-Lif, Tunisia
S. Belhadj Mohamed
Affiliation:
Laboratoire de PhotovoltaΪque, Centre de Recherches et des Technologies de l’Energie, Technopole de Borj-Cédria, BP 95, 2050 Hammam-Lif, Tunisia
A. Hajjaji
Affiliation:
Laboratoire de PhotovoltaΪque, Centre de Recherches et des Technologies de l’Energie, Technopole de Borj-Cédria, BP 95, 2050 Hammam-Lif, Tunisia
M. Gaidi
Affiliation:
Laboratoire de PhotovoltaΪque, Centre de Recherches et des Technologies de l’Energie, Technopole de Borj-Cédria, BP 95, 2050 Hammam-Lif, Tunisia
H. Ezzaouia
Affiliation:
Laboratoire de PhotovoltaΪque, Centre de Recherches et des Technologies de l’Energie, Technopole de Borj-Cédria, BP 95, 2050 Hammam-Lif, Tunisia
B. Bessais
Affiliation:
Laboratoire de PhotovoltaΪque, Centre de Recherches et des Technologies de l’Energie, Technopole de Borj-Cédria, BP 95, 2050 Hammam-Lif, Tunisia
*
a [email protected]
Get access

Abstract

In this paper, we study the optical, optoelectronic and photoluminescence properties of stain-etched porous silicon nanostructures obtained with different etching times. Special attention is given to the use of the stain-etched PS as an antireflection coating as well as for surface passivating capabilities. The surface morphology has been analyzed by scanning electron microscopy. The evolution of the Si-O and Si-H absorption bands was analyzed by Fourier transform infrared spectrometry before and after PS treatment. Results show that stain etching of the silicon surface drops the total reflectivity to about 7% in the 400–1100 nm wavelength range and the minority carrier lifetime enhances to about 48 μs.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 57 , Issue 2 , February 2012 , 21301
Copyright
© EDP Sciences, 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Menna, P., Di Francia, G., La Ferrara, V., Solar Energy Mater. Solar Cells 37, 13 (1995)CrossRef
Schirone, L., Sotguiu, G., Rallo, F., Califano, F.P., in Proc. of 13th European Photovoltaic Solar Energy Conf., Nice, France, 1992, p. 2447
Bilyalov, R.R., Lautenschlanger, H., Schindler, R., in Proc. of 2nd World Conf. on Photovoltaic Solar Energy Conversion, Vienna, Austria, 1999, p. 1642
Guerrero-Lemus, R., Hernández-RodrÍguez, C., Ben-Hander, F., MartÍnez-Duart, J.M., Solar Energy Mater. Solar Cells 72, 495 (2002)CrossRef
Yerokhov, V.Y., Melnik, I.I., Renew. Sust. Energ. Rev. 3, 291 (1999)CrossRef
Vásquez-A., M.A., Águila RodrÍguez, G., GarcÍa-Salgado, G., Romero-Paredes, G., Pena-Sierra, R., Rev. Mex. Fis. 53, 431 (2007)
Ben Rabha, M., BessaΪs, B., Sol. Energy 84, 486 (2010)CrossRef
Krotkus, A., Grigoras, K., Pacebutas, V., Barsony, I., Vazsonyi, E., Fried, M., Szlafcik, J., Nijs, J., Lévy-Clément, C., Solar Energy Mater. Solar Cells 45, 267 (1997)CrossRef
Ben Rabha, M., Dimassi, W., BouaΪcha, M., Ezzaouia, H., Bessais, B., Sol. Energy 83, 721 (2009)CrossRef