Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-20T00:50:41.827Z Has data issue: false hasContentIssue false
  • English
  • Français

A spectroscopic charge pumping model in spice for the low dimensional MOSFET's

Published online by Cambridge University Press:  15 January 2002

M. Kahouadji  and
F. Djahli
M. Kahouadji*
Affiliation:
Institute of Electronics, University of Bejaia, 06000 Bejaia, Algeria
F. Djahli
Affiliation:
Institute of Electronics, University of Bejaia, 06000 Bejaia, Algeria
*
[email protected]
Get access

Abstract

We have simulated the experimental spectroscopic charge pumping technique by the implementation of a model in the electrical simulator SPICE3F4. This model takes into account the temperature effect on the geometrical and electrical parameters of the studied transistor. The simulated results are in a good agreement with recent and different experimental results.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 17 , Issue 1 , January 2002 , pp. 35 - 39
Copyright
© EDP Sciences, 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

F. Djahli, Mise au point d'un dispositif expérimental pour l'étude des structures MOS : application à l'étude du vieillissement des TMOS microniques par la technique de pompage de charge, thèse Doct., Institut National des Sciences Appliquées de Lyon, 1992, 141 p.
M. Koyanagi, Y. Baba, K. Hata, A.G. Lewis, M. Fuse, R. Bruce, The charge pumping technique for grain boundary trap evolution in polysilicon, IEEE Trans. Electron Devices ED-13, 152 (1992).
Brugler, J.S., Jespers, P.G.A., Charge pumping in MOS devices, IEEE Trans. Electron Devices 16, 297 (1969). CrossRef
G. Groeseneken, E. Maes Herman, N. Beltran, R. Keersmaecker, A Reliable Approach to Charge-Pumping Measurements in MOS Transistors, IEEE Trans. Electron Devices ED-31, 42 (1984).
Van den Bosh, G., Groeseneken, G.V., Heremans, P., Maes, E., Spectroscopic charge pumping: A new procedure for mesuring interface trap distributions on MOS transistor, IEEE Trans. Electron Devices 38, 1820 (1991). CrossRef
J. Autran, Contribution au développement de nouvelles techniques de pompage de charge pour l'étude des défauts d'interface dans les transistors MOS silicium submicroniques, thèse Doct., Institut National des Sciences Appliquées de Lyon, 1994, pp. 66-72.
Djahli, F., Autran, J.L., Plossu, C., Balland, B., Use of charge pumping technique to understand non-uniform n-channel MOSFET degradation, Mater. Sci. Eng. B 23, 120 (1992). CrossRef
Djahli, F., Kaabi, L., A macro model in SMART SPICE to study the MOSFET degradation with CP technique, Int. J. Electron. 82, 471 (1997).