Published online by Cambridge University Press: 17 July 2008
Molecular dynamics simulations with Tersoff potentials were used to study the tensile and compressive mechanical behavior of SiC nanowires with torsion strain. The simulation results show that small torsion strain does not affect the mechanical behavior of SiC nanowires. However, large torsion strain induces the decrease of the critical stress. With large torsion strain, the collapse occurs in the nanowires before tensile failure and compressive buckling, and deformation zone occurs in the collapsed part.