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Simulation on the effects of torsion strain on the mechanical properties of SiC nanowires under tensile and compressive loading

Published online by Cambridge University Press:  17 July 2008

Z.-G. Wang ,
D.-M. Cheng ,
Z.-J. Li  and
X.-T. Zu
Z.-G. Wang*
Affiliation:
Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054, P.R. China
D.-M. Cheng
Affiliation:
Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054, P.R. China
Z.-J. Li
Affiliation:
Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054, P.R. China
X.-T. Zu
Affiliation:
Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054, P.R. China
*
[email protected]
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Abstract

Molecular dynamics simulations with Tersoff potentials were used to study the tensile and compressive mechanical behavior of SiC nanowires with torsion strain. The simulation results show that small torsion strain does not affect the mechanical behavior of SiC nanowires. However, large torsion strain induces the decrease of the critical stress. With large torsion strain, the collapse occurs in the nanowires before tensile failure and compressive buckling, and deformation zone occurs in the collapsed part.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 44 , Issue 1: 10th Meeting of the French Microscopy Society (SFMU) , October 2008 , pp. 47 - 50
Copyright
© EDP Sciences, 2008

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