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Published online by Cambridge University Press: 15 August 2001
This paper presents a flexible numerical technique which is especially suited to analyze lateral modulation of quantum effects in short channel MOS transistors. We discuss boundary conditions for the Schrödinger equation and the impact of the finite element meshing. We show how channel length shortening alters the sub-band structure, thus giving an evaluation of the limits of a 1D quantum approach.
This paper has been presented at 3es Journées Nationales “Hétérostructures à semiconducteurs IV-IV” , Orsay, July 2000.