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Selective emitters diffusion using an air belt furnace

Published online by Cambridge University Press:  28 January 2005

A. Mouhoub ,
B. Benyahia  and
Br. Mahmoudi
A. Mouhoub
Affiliation:
Laboratoire des Cellules Photovoltaïques, Unité de Développement de la Technologie du Silicium, 2 boulevard Frantz Fanon, BP 399, Alger-Gare, Algeria
B. Benyahia*
Affiliation:
Laboratoire des Cellules Photovoltaïques, Unité de Développement de la Technologie du Silicium, 2 boulevard Frantz Fanon, BP 399, Alger-Gare, Algeria
Br. Mahmoudi
Affiliation:
Laboratoire des Cellules Photovoltaïques, Unité de Développement de la Technologie du Silicium, 2 boulevard Frantz Fanon, BP 399, Alger-Gare, Algeria
*
[email protected]
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Abstract

A new and simple process for the selective emitter realization was developed on multicrystalline silicon wafers. This material is in competition with single-crystal silicon since it is able to lead to similar performances with a reduction in the cost of solar cell realization. This work is centred on the study of emitter area of a photovoltaic cell and the possibilities to obtain a selective emitter in only one step while avoiding the use of chemicals. This would make substantial economies on the rejections treatment which became a capital environmental factor. A structure with selective emitter consists of a heavy doping under the metallic contacts, leaving weak the surface concentration between the grid lines. This allows a good surface passivation while keeping a good contact resistance for screen printed lines. The advantages of such a structure could be observed by quantum efficiency measurements yield where the benefit appears in the UV-VIS range of the solar spectrum.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 30 , Issue 1 , April 2005 , pp. 3 - 6
Copyright
© EDP Sciences, 2005

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References

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