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RF characterisation and modelling of AlGaAs/GaAs HBTfor 1.8 GHz applications

Published online by Cambridge University Press:  15 September 1999

A. Cazarré ,
J. Tasselli ,
P. Souverain ,
J. Verdier  and
A. Marty
A. Cazarré*
Affiliation:
Laboratoire d'Analyse et d'Architecture des Systèmes du CNRS, 7 avenue du Colonel Roche, 31077 Toulouse Cedex 4, France
J. Tasselli
Affiliation:
Laboratoire d'Analyse et d'Architecture des Systèmes du CNRS, 7 avenue du Colonel Roche, 31077 Toulouse Cedex 4, France
P. Souverain
Affiliation:
Laboratoire d'Analyse et d'Architecture des Systèmes du CNRS, 7 avenue du Colonel Roche, 31077 Toulouse Cedex 4, France
J. Verdier
Affiliation:
Laboratoire d'Analyse et d'Architecture des Systèmes du CNRS, 7 avenue du Colonel Roche, 31077 Toulouse Cedex 4, France
A. Marty
Affiliation:
Laboratoire d'Analyse et d'Architecture des Systèmes du CNRS, 7 avenue du Colonel Roche, 31077 Toulouse Cedex 4, France
*
[email protected]
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Abstract

For power applications, AlGaAs/GaAs heterojunction bipolar transistors (HBT's) were found to present high efficiency and linearity at high density RF power. We reportpower performances in S-band of a 6 × 60 µm2 one emitter finger HBTfabricated in our laboratory. At 1.8 GHz, when tuned for maximum efficiency, eachtransistor delivered a CW output power of 0.5 W (150 kW/cm2) and a power-addedefficiency of 62% and 80% in class AB and C operation respectively.The physical model based on technological and measured parametersincorporates temperature dependence for most of its parameters. It has been easilyused to analyse DC and RF power characteristics in class AB mode and to determineinput and output optimum matching cells. Good agreement between simulated andexperimental results support the validity of the model.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 7 , Issue 3 , September 1999 , pp. 241 - 246
Copyright
© EDP Sciences, 1999

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