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Remote surface roughness effects on inversion electron density in nano-MOSFET

Published online by Cambridge University Press:  02 October 2009

Z.-O. Wang  and
L.-F. Mao
Z.-O. Wang
Affiliation:
School of Electronics & Information Engineering, Soochow University, 178 Gan-jiang East Road, Suzhou 215021, P.R. China
L.-F. Mao*
Affiliation:
School of Electronics & Information Engineering, Soochow University, 178 Gan-jiang East Road, Suzhou 215021, P.R. China
*
[email protected]
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Abstract

In this paper the remote surface roughness effects on channel electron density of nano MOSFET is discussed by solving the coupled Schrödinger equation and Poisson equation. The results demonstrate that the remote surface roughness could largely affect the density of inversion channel electron, and the change of electron density by this effect has been found to have approximately linear relationship to the remote surface roughness. This implies that the mobility degradation effect by remote surface roughness scattering can be partially erased for the on-state current.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 48 , Issue 2 , November 2009 , 20301
Copyright
© EDP Sciences, 2009

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