Standard [001]-oriented p- (12–20 Ω cm) and n-type (1.8–2.6 Ω cm) Czochralski (Cz) silicon wafers were treated by a RF (13.56 MHz) hydrogen plasma at a substrate temperature of 250 °C. After the plasma hydrogenation subsequent annealing was applied up to 600 °C in air. The formation of H2 molecules in voids/platelets was investigated by Raman spectroscopy. The Raman intensities of the H2 vibration modes at ~4150 cm−1 exhibited significant intensity modulations in dependence on the annealing temperature. The intensities of the H2 Raman lines indirectly monitor the evolution of the voids/platelets upon annealing. This assumption was verified by cross-sectional transmission electron microscopy (XTEM), which was applied for comparison. The intensity modulations of the H2 Raman signal can be explained by the evolution of $\{111\}$ and $\{001\}$ platelets. At lower annealing temperatures (<500 °C) platelets laying in $\{111\}$ planes are dominant, while at elevated temperatures (≥500 °C) [001]-oriented platelets become more and more important. $\{110\}$ platelets were also observed using XTEM measurements in p-type material. In case of p-type substrates the Raman intensities were significant higher than for n-type material. The higher H2 Raman intensities in p-type Cz Si can be explained by the amphoteric character of hydrogen in silicon.