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Quantitative spectroscopic strain analysis of AlGaAs-based high-power diode laser devices

Published online by Cambridge University Press:  15 July 2004

J. W. Tomm ,
A. Gerhardt ,
M. L. Biermann  and
J. P. Holland
J. W. Tomm*
Affiliation:
Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Str. 2A, Germany
A. Gerhardt
Affiliation:
Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Str. 2A, Germany
M. L. Biermann
Affiliation:
Physics Department, 566 Brownson Rd., U. S. Naval Academy, Annapolis, MD 21402, USA
J. P. Holland
Affiliation:
Physics Department, 566 Brownson Rd., U. S. Naval Academy, Annapolis, MD 21402, USA
*
[email protected]
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Abstract

Results of quantitative spectroscopic analysis of packaging-induced strain in In0.06Ga0.86Al0.08As/Ga0.7Al0.3As/GaAs high-power ‘cm-bars’ diode laser arrays are presented. Theoretically, the influence on the results of particular device structure properties, such as intrinsic strain, is analyzed. We compare these theoretical results, which are based on a unaxial stress model, with photocurrent data. For In-soldered devices on copper heatsinks, we find a strain difference of (0.050 ± 0.015)% between edge and center of the device. Almost complete strain-relaxation toward the device edges is experimentally demonstrated. The general approach is also applicable to the analysis of all data that refer to changes of the electronic bandstructure, such as absorption and photoluminescence.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 461 - 464
Copyright
© EDP Sciences, 2004

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References

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