Hostname: page-component-cd9895bd7-fscjk Total loading time: 0 Render date: 2024-12-26T06:04:55.813Z Has data issue: false hasContentIssue false
  • English
  • Français

Production of structurally perfect single crystals of CdTe and CdZnTe

Published online by Cambridge University Press:  15 July 2004

Yu. M. Ivanov ,
V. V. Artemov ,
V. M. Kanevsky ,
A. N. Polyakov ,
V. S. Chudakov ,
E. M. Pashaev  and
R. A. Senin
Yu. M. Ivanov*
Affiliation:
Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow 119333, Russia
V. V. Artemov
Affiliation:
Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow 119333, Russia
V. M. Kanevsky
Affiliation:
Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow 119333, Russia
A. N. Polyakov
Affiliation:
Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow 119333, Russia
V. S. Chudakov
Affiliation:
Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow 119333, Russia
E. M. Pashaev
Affiliation:
Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow 119333, Russia
R. A. Senin
Affiliation:
Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow 119333, Russia
*
[email protected]
Get access

Abstract

Single-crystal ingots of CdTe and Cd0,96Zn0.04Te 60–100 mm in diameter were grown by directional solidification using the self-seeding technique. The microstructure of the crystals was checked by optical microscopy, electron microscopy (TEM, SEM and EBIC), cathodoluminescence, and X-ray diffraction. It was found that crystal perfection depends to a large measure on the temperature schedule during Lpostgrowth crystal cooling: special caution should be exercised in the temperature interval including the polymorphous transformation. A direct relationship between optical and electronic properties on the one hand and crystal microstructure on the other hand was established.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 371 - 374
Copyright
© EDP Sciences, 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Marfaing, J., J. Cryst. Growth 197, 707 (1999) CrossRef
W. Albers, in Physics and Chemistry of II–VI Compounds, edited by M. Aven, J. S. Prener (Amsterdam 1967), p. 173
Yu. M. Ivanov, V. S. Chudakov, V. M. Kanevski et al., Poverkhnost 10, 65 (2001)
Yu. M. Ivanov, A. N. Polyakov, V. M.Kanevski et al., Phys. Stat. Sol. C 3, 889 (2003) CrossRef
Avetisov, I. Ch., Ivanov, Yu. M., Zorin, A. V., Poverkhnost 10, 82 (2001)
Ivanov, Yu. M., J. Cryst. Growth 161, 12 (1996) CrossRef
A. Koyama, R. Hirano, US Patent 6, 299, 680 B1 (2001)
Ivanov, Yu. M., J. Cryst. Growth 194, 309 (1998) CrossRef
Chudakov, V. S., Prave, G. G., Yanusova, L. G., Kristallografia 32, 1445 (1987)
Kudriashov, I. A., Lifshits, I. E., Prave, G. G. et al., Prib. Tekh. Eksp. 4, 185 (1987)
Potter, R. W., Barnes, H. L., Am. Mineral. 63, 1143 (1978)
Ishiki, M., Metals (in Japan) 67, 1060 (1997)
Greenberg, J. H., J. Cryst. Growth 161, 1 (1996) CrossRef
Greenberg, J. H., J. Cryst. Growth 197, 406 (1999) CrossRef