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A photovoltaic response of a Schottky diode basedon the conducting polymer PEDOT:PSS and inorganic semiconductors

Published online by Cambridge University Press:  22 July 2010

V. V. Kislyuk ,
P. S. Smertenko ,
O. P. Dimitriev  and
A. A. Pud
V. V. Kislyuk
Affiliation:
Taras Shevchenko Kyiv National University, pr. Glushkov 2/5, 03022 Kyiv, Ukraine
P. S. Smertenko
Affiliation:
Institute of Semiconductor Physics, pr. Nauki 45, 03028 Kyiv, Ukraine
O. P. Dimitriev*
Affiliation:
Institute of Semiconductor Physics, pr. Nauki 45, 03028 Kyiv, Ukraine
A. A. Pud
Affiliation:
Institute of Bioorganic Chemistry and Petrochemistry, 50 Kharkivske shose, 02160 Kyiv, Ukraine
*
* [email protected]
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Abstract

Hybrid organic-inorganic heterostructures have been produced using the conducting polymer PEDOT:PSS and three types of semiconductor single crystals, i.e., high-ohmic and low-ohmic cadmium sulphide (CdS, n-type semiconductor) and low-ohmic cadmium telluride (CdTe, p-type semiconductor). A photovoltaic (PV) response was observed upon light illumination of both CdS/PEDOT:PSS and CdTe/PEDOT:PSS heterojunctions. Photocurrent spectra unequivocally evidenced the main contribution of band-band transitions of inorganic crystals to the PV response, and current-voltage measurements indicated that band bending due to a depleting region at the surface of the crystals takes place. The suggested band bending was consistent with the model of the vacuum level alignment only at the interface of the low-ohmic CdS crystal and the polymer, which results in formation of a Schottky barrier responsible for the PV response. However, the analogous band bending for high-ohmic CdS and p-type CdTe crystals could be associated only with the Fermi level pinning regime at the semiconductor interfaces.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 51 , Issue 2 , August 2010 , 20301
Copyright
© EDP Sciences, 2010

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