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Phase segregation, Cu migration and junction formationin Cu(In, Ga)Se2

Published online by Cambridge University Press:  15 May 1999

R. Herberholz ,
U. Rau ,
H. W. Schock ,
T. Haalboom ,
T. Gödecke ,
F. Ernst ,
C. Beilharz ,
K. W. Benz  and
D. Cahen
R. Herberholz
Affiliation:
Institut für Physikalische Elektronik (IPE), Universität Stuttgart, 70569 Stuttgart, Germany
U. Rau*
Affiliation:
Institut für Physikalische Elektronik (IPE), Universität Stuttgart, 70569 Stuttgart, Germany
H. W. Schock
Affiliation:
Institut für Physikalische Elektronik (IPE), Universität Stuttgart, 70569 Stuttgart, Germany
T. Haalboom
Affiliation:
Max-Planck-Institut für Metallforschung, 70174 Stuttgart, Germany
T. Gödecke
Affiliation:
Max-Planck-Institut für Metallforschung, 70174 Stuttgart, Germany
F. Ernst
Affiliation:
Max-Planck-Institut für Metallforschung, 70174 Stuttgart, Germany
C. Beilharz
Affiliation:
Kristallographisches Institut, Universität Freiburg, 79104 Freiburg, Germany
K. W. Benz
Affiliation:
Kristallographisches Institut, Universität Freiburg, 79104 Freiburg, Germany
D. Cahen*
Affiliation:
Weizmann Institute of Science, Dept. of Materials & Interfaces, Rehovot 76100, Israel
*
[email protected] [email protected]
[email protected] [email protected]
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Abstract

A reinvestigation of the phase diagram of the Cu–In–Se system along the quasi-binarycut In2Se3–Cu2Se reveals an existence range of the chalcopyriteα-phase that is much narrower than commonly accepted. The presence of 0.1% ofNa or replacement of In by Ga at the at.% level widens the existence range of theα-phase, towards In- and Ga-rich compositions. We also investigate the interplay between phase segregation and junction formation in polycrystallineCu(In, Ga)Se2 films. Here, we attribute the band bending observed at bare surfacesof the films to a positively charged surface acting as a driving force for theformation of a Cu-poor surface defect layer via Cu-electromigration. Theelectrical properties of this defect layer are different from those found for thebulk β-phase. We suggest that Cu-depletion is self-limited at the observedIn/(In+Cu) surface composition of 0.75 because further Cu-depletion would require astructural transformation. Capacitance measurements reveal two types of junctionmetastabilities: one resulting from local defect relaxation, invoked to explain alight-induced increase of the open-circuit voltage of Cu(In, Ga)Se2 solar cells,and one due to Cu-electromigration.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 6 , Issue 2 , May 1999 , pp. 131 - 139
Copyright
© EDP Sciences, 1999

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