Hostname: page-component-cd9895bd7-gbm5v Total loading time: 0 Render date: 2024-12-26T16:55:44.508Z Has data issue: false hasContentIssue false
  • English
  • Français

Parasitic effects and traps in AlGaN/GaN HEMT on sapphire substrate

Published online by Cambridge University Press:  24 June 2010

O. Fathallah ,
M. Gassoumi ,
B. Grimbert ,
C. Gaquière  and
H. Maaref
O. Fathallah
Affiliation:
Laboratoire de Micro-Optoélectroniques et Nanostructures, Faculté des Sciences de Monastir, Avenue de l'Environnement, 5000 Monastir, Tunisia
M. Gassoumi*
Affiliation:
Laboratoire de Micro-Optoélectroniques et Nanostructures, Faculté des Sciences de Monastir, Avenue de l'Environnement, 5000 Monastir, Tunisia
B. Grimbert
Affiliation:
Institut d'Électronique de Microélectronique et de Nanotechnologie IEMN (TIGER), Département hyperfréquences et Semiconducteurs, Université des Sciences et Technologies de Lille, Avenue Poincaré, 59652 Villeneuve d'Ascq Cedex, France
C. Gaquière
Affiliation:
Institut d'Électronique de Microélectronique et de Nanotechnologie IEMN (TIGER), Département hyperfréquences et Semiconducteurs, Université des Sciences et Technologies de Lille, Avenue Poincaré, 59652 Villeneuve d'Ascq Cedex, France
H. Maaref
Affiliation:
Laboratoire de Micro-Optoélectroniques et Nanostructures, Faculté des Sciences de Monastir, Avenue de l'Environnement, 5000 Monastir, Tunisia
*
[email protected]
Get access

Abstract

AlGaN/GaN high electron mobility transistors (HEMTs) with sapphire (Al2O3) substrates reveal anomalies like kink effect, current collapse, hysteresis phenomena on I ds -V ds and I ds -V gs . These parasitic effects can be attributed to the presence of traps in the hetero-structure. Deep defects analysis was performed by conductance deep level transient spectroscopy (CDLTS) under drain pulse. Four electron traps have been detected with activation energy and capture cross-section of 2.62 eV, 1.18 eV, 0.97 eV, 0.48 eV, σ n = 2.4 × 10-17 cm2 and σ n = 2.37 × 10-14 cm2, σ n = 2 × 10-12 cm2 and σ n = 4.67 × 10-14 cm2 respectively. The localisation and the identification of these traps have occurred and a correlation between defects and parasitic effects has been discussed.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 51 , Issue 1 , July 2010 , 10304
Copyright
© EDP Sciences, 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Takeshi Tanaka, Kazuto Takano, Tomoyoshi Mishima, Yoshiharu Kohji, Yohei Otoki, Takeshi Meguro, , Hitachi Cable Review 24, 11 (2005)
Gangwani, P., Pandey, S., Haldar, S., Gupta, M., Gupta, R.S., Solid-State Electron. 51, 130 (2007) CrossRef
Wang, X.L., Shen, T.S., Xiao, H.L., Wang, C.M., Hu, G.X., Luo, W.J., TANG, J., Guo, L.C., Li, J.M., Solid-State Electron. 58, 926 (2008) CrossRef
Ducatteau, D., Minko, A., Hoël, V., Morvan, E., Delos, E., Grimbert, B., Lahreche, H., Bove, P., Gaquière, C., De Jaeger, J.C., Delage, S., IEEE Electron Dev. Lett. 27, 7 (2006) CrossRef
Gassoumi, M., Bluet, J.M., Guillot, G., Gaquière, C., Maaref, H., Mater. Sci. Eng. C 28, 787 (2008) CrossRef
Binari, S.C., Kruppa, W., Dietrich, H.B., Kelner, G., Wickenden, A.E., Freitas Jr, J.A.., Solid-State Electron. 41, 1549 (1997) CrossRef
Dermoul, I., Kalboussi, A., Chekir, F., Maaref, H., Microelectron. J. 31, 359 (2000) CrossRef
Gassoumi, M., Fathallah, O., Gaquière, C., Maaref, H., Phys. B: Condens. Matter 405, 2337 (2010) CrossRef
B. Georgescu, A. Souifi, G. Post, G. Guillot, in Proc. of 9th Int. Conf. on Indium Phosphide and Related Materials, Hyamis, USA, 1997, p. 251
Sornerville, M.H., Del Alamoand, J.A., Hoke, W., IEEE Electron Dev. Lett. 17, 473 (1996) CrossRef
Arulkumaran, S., Egawa, T., Ishikawa, H., Solid-State Electron. 49, 1632 (2005) CrossRef
Arulkumaran, S., Liu, Z.H., Ng, G.I., Cheong, W.C., Zeng, R., Bu, J., Wang, H., Radhakrishnan, K., Tan, C.L., Thin Solid Films 515, 4517 (2007) CrossRef
Meneghesso, G., Zanon, F., Uren, M.J., Zanoni, E., IEEE Electron Dev. Lett. 30, 100 (2009) CrossRef
Suemitsu, T., Enoki, T., Sano, N., Tomizawa, M., Ishii, Y., IEEE Trans. Electron Devices 45, 2390 (1998) CrossRef
Takayanagi, H., Nakano, H., Yonemoto, K., Horio, K., J. Comput. Electron. 5, 223 (2006) CrossRef
Klein, P.B., Freitas Jr, J.A.., S.C. Binari, A.E. Wickenden, Appl. Phys. Lett. 75, 4016 (1999) CrossRef
Binari, S.C., Ikossi, K., Roussos, J.A., Kruppa, W., Park, D., Dietrich, H.B., Koleske, D.D., Wickenden, A.E., Henry, R.L., IEEE Trans. Electron Dev. 48, 465 (2001) CrossRef
Nakajima, A., Yagi, S., Shimizu, M., Adachi, K., Okumura, H., Mater. Sci. Forum 556, 1035 (2007) CrossRef
Vetury, R., Zhang, N.Q., Keller, S., Mishra, U.K., IEEE Trans. Electron Devices 48, 560 (2001) CrossRef
Gassoumi, M., Bluet, J.M., Chekir, F., Dermoul, I., Maaref, H., Guillot, G., Minko, A., Hoël, V., Gaquière, C., Mater. Sci. Eng. C 26, 383 (2006) CrossRef
Hierro, A., Ringel, S.A., Hansen, M., Speck, J.S., Mishra, U.K., Denbaars, S.P., Appl. Phys. Lett. 77, 1499 (2000) CrossRef
Fang, Z.Q., Look, D.C., Kim, D.H., Adesida, I., Appl. Phys. Lett. 87, 182115 (2005) CrossRef
Götz, W., Johnson, N.M., Amano, H., Akasaki, I., Appl. Phys. Lett. 65, 463 (1994) CrossRef
Lee, W.I., Huang, T.C., Guo, J.D., Feng, M.S., Appl. Phys. Lett. 67, 1721 (1995) CrossRef