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Oxygen in GaAs and its relation to the EL3 defect investigated by TSC and PICTS

Published online by Cambridge University Press:  15 July 2004

A. Wohlrab ,
B. Gründig-Wendrock ,
M. Jurisch ,
F.-M. Kiessling  and
J. R. Niklas
A. Wohlrab*
Affiliation:
Institut für Experimentelle Physik, TU Bergakademie Freiberg, Silbermannstr. 1, Freiberg, 09599, Germany
B. Gründig-Wendrock
Affiliation:
Institut für Experimentelle Physik, TU Bergakademie Freiberg, Silbermannstr. 1, Freiberg, 09599, Germany
M. Jurisch
Affiliation:
Freiberger Compound Materials GmbH, Am Junger Löwe Schacht 5, Freiberg, 09599, Germany
F.-M. Kiessling
Affiliation:
Institut für Kristallzüchtung, Max-Born-Str. 2, Berlin, 12489, Germany
J. R. Niklas
Affiliation:
Institut für Experimentelle Physik, TU Bergakademie Freiberg, Silbermannstr. 1, Freiberg, 09599, Germany
*
[email protected]
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Abstract

Thermally stimulated current (TSC) and photo induced current transient spectroscopy (PICTS) were used to investigate deep traps in oxygen-rich medium resistivity GaAs. We observed an abnormal behaviour of the TSC signal at a temperature of about 200 K, where the TSC current is lower than the dark current. This results in a negative peak occurring in the temperature range where the signal of the well known EL3 defect in undoped semi-insulating GaAs is present. For verification, comparative PICTS-measurements were performed, which exhibit the same negative peak at similar temperatures. The activation energy for this negative peak was determined to be ~ 0.6 eV (TSC). This is in good agreement with published values for the EL3 ranging from 0.56 to 0.68 eV. Furthermore, we illustrate that the depth of the peak increases with increasing oxygen content. Our results support the assumption, that oxygen on an arsenic site – the so called off centre oxygen oc-OAs – should be the origin of the EL3.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 223 - 226
Copyright
© EDP Sciences, 2004

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