Hostname: page-component-cd9895bd7-jn8rn Total loading time: 0 Render date: 2024-12-26T16:10:12.387Z Has data issue: false hasContentIssue false
  • English
  • Français

Overview of antimonide based III-V semiconductor epitaxial layers and their applications at the center for quantum devices

Published online by Cambridge University Press:  15 September 2003

M. Razeghi
M. Razeghi*
Affiliation:
Center for Quantum Devices, Northwestern University, Evanston, IL 60208, USA
*
[email protected]
Get access

Abstract

The properties of Sb-based III-V semiconductor compounds for optoelectronic applications in the mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) range were reviewed. The growths of the Sb-based binary, ternary and quaternary were studied by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). The structural, optical and electrical characterizations were carried out. Focal plane array, photoconductors and photodiodes were fabricated for the MWIR and LWIR range. Doublehetero structure (DH), multi-quantum well (MQW) and strained superlattice (SSL) lasers in the 3–5 μm range were fabricated. InAs-GaSb type-II superlattices were designed, grown and fabricated into photodetectors for the MWIR and LWIR range.

Keywords

Type
Review Article
Information
The European Physical Journal - Applied Physics , Volume 23 , Issue 3 , September 2003 , pp. 149 - 205
Copyright
© EDP Sciences, 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

M. Schlessinger, Infrared Technology Fundamentals (Marcel Dekker, Inc., New York, 1995)
Walker, H., Z. Naturf. 7A, 744 (1952) (in German)
R.C. Sharma, Y.L. Ngai, Y.A. Chang, Binary alloy phase diagrams, ASM Int., Vol. 3, 2nd edn., edited by T.B. Massalski, p. 2286 (1990)
Jung, Y.J., Park, M.K., Tae, Si., Lee, K.H., Lee, H.J., J. Appl. Phys. 69, 3109 (1991) CrossRef
M. Neuberger, III-V Ternary Semiconducting Compounds Data Tables (Plenum, New York, 1972)
Parrish, W.J., Balckwell, J.D., Kincaid, G.T., Paulson, R.C., Proc. SPIE 1540, 274 (1991) CrossRef
Hoffman, A., Randall, D., Proc. SPIE 1540, 297 (1991) CrossRef
R.D. Thom, T.L. Koch, J.D. Langan, W.J. Parrish, IEEE Trans. Electron. Dev. ED-27, 160 (1980)
Mortan International, ``CVD'' metalorganics for vapor phase epitaxy: product guide and literature review II
G.B. Stringfellow, Organometallic vapor-phase epitaxy: Theory and practice (Academic Press, 1989)
R.S. Wagner, Whiskers technology, edited by A.P. Levitt (Wiley, New York, 1970), p. 47
Buchan, N.I., Larsen, C.A., Stringfellow, G.B., J. Cryst. Growth 92, 591 (1988) CrossRef
Larsen, C.A., Li, S.H., Stringfellow, G.B., Chem. Mat. 3, 39 (1991) CrossRef
Choi, Y.H., Sudharsanan, R., Besikci, C., Bigan, E., Razeghi, M., Mat. Res. Soc. Symp. Proc. 281, 375 (1993) CrossRef
Besikci, C., Choi, Y.H., Sudharsanan, R., Razeghi, M., J. Appl. Phys. 73, 5009 (1993) CrossRef
Soderstrom, J.R., Cumming, M.M., Yao, J.-Y., Anderson, T.G., Semicond. Sci. Technol. 7, 337 (1992) CrossRef
Yano, M., Takase, T., Kimata, M., Phys. Stat. Sol. A 54, 707 (1979) CrossRef
A. Rose, Concept in photoconductivity and allied problems (Wiley, New York, 1963)
Michel, E., Kim, J.D., Javadpour, S., Xu, J., Ferguson, I., Razeghi, M., Appl. Phys. Lett. 69, 215 (1996) CrossRef
Bloom, I., Nemirovsky, Y., IEEE Trans. Electron. Devices 40, 309 (1993) CrossRef
Wieder, H.H., Clawson, A.R., Thin Solid Films 15, 217 (1973) CrossRef
Bethea, C.G., Levine, B.F., Yen, M.Y., Cho, A.Y., Appl. Phys. Lett. 53, 291 (1988) CrossRef
P.K. Chiang, S.M. Bedair, Appl. Phys. Lett. 53, 142 (988)
Rogalski, A., JoYwikowski, K., Infrared Phys. 29, 35 (1989) CrossRef
Yen, M.Y., Appl. Phys. 64, 3306 (1988) CrossRef
Coders, W.M., Woolley, J.C., Can. J. Phys. 46, 1207 (1968) CrossRef
Chin, V.W.L., Egan, R.J., Tansley, T.L., J. Appl. Phys. 69, 3571 (1991) CrossRef
Besikci, C., Choi, Y.H., Labeyrie, G., Bigan, E., Razeghi, M., Cohen, J.B., Carsello, J., Dravid, V.P., J. Appl. Phys. 76, 5820 (1994) CrossRef
Kim, J.D., Wu, D., Wojkowski, J., Piotrowski, J., Xu, J., Razeghi, M., Appl. Phys. Lett. 68, 99 (1996) CrossRef
Kim, J.D., Kim, S., Wu, D., Wojkowski, J., Xu, J., Piotrowski, J., Bigan, E., Razeghi, M., Appl. Phys. Lett. 67, 2645 (1995) CrossRef
Michel, E., Kim, J.D., Park, S., Xu, J., Ferguson, I., Razeghi, M., Proc. SPIE 2685, 105 (1996)
Schilfgaarde, M., Sher, A., Appl. Phys. Lett. 62, 1857 (1993) CrossRef
Choi, Y.H., Besikci, C., Sudharsanan, R., Razeghi, M., Appl. Phys. Lett. 63, 361 (1993) CrossRef
Huang, K.T., Cohen, R.M., Stringfellow, G.B., J. Growth 156, 320 (1995) CrossRef
Karam, N.K., Sudharsanan, R., Pardos, T., Dodd, M.A., J. Electron Mater. 25, 1209 (1996) CrossRef
Choi, Y.H., Staveteig, P.T., Bigan, E., Razeghi, M., J. Appl. Phys. 75, 3196 (1994) CrossRef
Staveteig, P.T., Choi, Y.H., Labeyrie, G., Bigan, E., Razeghi, M., Appl. Phys. Lett. 64, 460 (1994) CrossRef
Bigan, E., Choi, Y.H., Labeyrie, G., Razeghi, M., Proc. SPIE 2145, 2 (1994) CrossRef
M. Razeghi, Y.H. Choi, J.D. Kim, E, Bigan, Proc. Electrochem. Soc., Miami Beach, Florida, October, 1994
Razeghi, M., Choi, Y.H., He, X., Sun, C.J., Mat. Sci. Technol. 11, 3 (1995) CrossRef
J.C. Phillips, Bonds and Bands in Semiconductors (Academic, New York, 1973)
Lee, J.J., Razeghi, M., Appl. Phys. Lett. 76, 297 (2000) CrossRef
Besikci, C., Choi, Y.H., Labeyrie, G., Bigan, E., Razeghi, M., Cohen, J.B., Carsello, J., Dravid, V.P., J. Appl. Phys. 76, 5820 (1994) CrossRef
Chin, V.W., Egan, R.J., Tansley, T.L., J. Appl. Phys. 69, 3571 (1991) CrossRef
Harrison, J.W., Hauser, J.R., J. Appl. Phys. 47, 292 (1976) CrossRef
Lee, J.J., Kim, J.D., Razeghi, M., Appl. Phys. Lett. 71, 2298 (1997) CrossRef
Lee, J.J., Kim, J.D., Razeghi, M., Appl. Phys. Lett. 73, 602 (1998) CrossRef
O. Duchemin, III-V Materials (1994)
Fukui, T., Horikoshi, Y., Jpn J. Appl. Phys. 19, L53 (1980) CrossRef
Onabe, K., NEC Res. Dev. 72, 1 (1984)
Landolt and Börnstein, Numerical Data and Functional Relationships in Science and Technology: Semiconductors (Springer-Verlag, Berlin, 1982)
Diaz, J., Yi, H., Rybaltowski, A., Lane, B., Lukas, G., Wu, D., Kim, S., Erdtmann, M., Kaas, E., Razeghi, M., Appl. Phys. Lett. 70, 40 (1997) CrossRef
Matthews, J.W., Blakeslee, A.E., J. Cryst. Growth 27, 118 (1974)
People, R., Bean, J.C., Appl. Phys. Lett. 47, 322 (1985) CrossRef
Mohseni, H., Litvinov, V., Razeghi, M., Phys. Rev. B 58, 378 (1998) APS Link not valid for this citation CrossRef
Rybaltowski, A., Xiao, Y., Wu, D., Lane, B., Yi, H., Feng, H., Diaz, J., Razeghi, M., Appl. Phys. Lett. 71, 2430 (1997) CrossRef
Sai-Halasz, G.A., Tsu, R., Esaki, L., Appl. Phys. Lett. 30, 651 (1977) CrossRef
Sai-Halasz, G.A., Chang, L.L., Welter, J.M., Esaki, L., Solid State Commun. 27, 935 (1978) CrossRef
Sai-Halasz, G.A., Esaki, L., Phys. Rev. B 18, 2812 (1978) CrossRef
Smith, D.L., Mailhiot, C., J. Appl. Phys. 62, 2545 (1987) CrossRef
Youngdale, R., Meyer, J.R., Hoffman, C.A., Bartoli, F.J., Appl. Phys. Lett. 64, 3160 (1994) CrossRef
Xie, H., Wang, W.I., J. Appl. Phys. 76, 92 (1994) CrossRef
Johnson, J.L., Samoska, L.A., Gossard, A.C., Merz, J., Jack, M.D., Chapman, G.R., Baumgratz, B.A., Kosai, K., Johnson, S.M., J. Appl. Phys. 80, 1116 (1996) CrossRef
Fuchs, F., Weimer, U., Pletschen, W., Schmitz, J., Ahlswede, E., Walther, M., Wagner, J., Koidl, P., Appl. Phys. Lett. 71, 3251 (1997) CrossRef
Yang, B.H., Zhang, D., Yang, R.Q., Lin, C.-H., Murry, S.J., Pei, S.S., Appl. Phys. Lett. 72, 2220 (1998) CrossRef
Felix, C.L., Meyer, J.R., Vurgaftman, I., Lin, C.H., Murry, S.J., Zhang, D., Pei, S.S., Phot. Tech. Lett. 9, 734 (1997) CrossRef
Mohseni, H., Michel, E., Sandoen, J., Razeghi, M., Mitchel, W., Brown, G., Appl. Phys. Lett. 71, 1403 (1997) CrossRef
Herres, N., Fuchs, F., Schmitz, J., Pavlov, K., Wagner, J., Ralston, J., Koidl, P., Gadaleta, C., Scamarcio, G., Phys. Rev. B 53, 15688 (1996) CrossRef
Mohseni, H., Michel, E.J., Razeghi, M., Mitchel, W.C., Brown, G.J., SPIE 3287, 30 (1998)
E.V. Kutchis, Galvanomagnetic Effects and Methods of Their Investigations (Izd. Radiosvyaz, Moscow, 1990)
Zegrya, G., Andreev, A., Appl. Phys. Lett. 67, 2681 (1995) CrossRef
Piotrowski, J., Galus, W., Grudzien, M., Infrared Phys. 31, 1 (1990) CrossRef
Wang, D., Bosman, G., Wang, Y., Li, S., J. Appl. Phys. 77, 1107 (1995) CrossRef
Long, D., Infrared Phys. 7, 169 (1967) CrossRef
Slivken, S., Matlis, A., Jelen, C., Rybaltowski, A., Diaz, J., Razeghi, M., Appl. Phys. Lett. 74, 173 (1999) CrossRef
H. Mohseni, M. Razeghi, Proc. 1999-ISDRS, 563 (1999)
Mohseni, H., Wojkowski, J., Razeghi, M., IEEE J. Quantum Elect. 35, 1041 (1999) CrossRef
Chow, D., Miles, R., Schulman, J., Collins, D., McGill, T., Semicond. Sci. Technol. 6, C47 (1991) CrossRef
Mohseni, H., Michel, E., Sandven, J., Razeghi, M., Mitchel, W., Brown, G., Appl. Phys. Lett. 71, 1403 (1997) CrossRef
Mohseni, H., Tahraoui, A., Wojkowski, J., Razeghi, M., Brown, G.J., Mitchel, W.C., Park, Y.S., Appl. Phys. Lett. 77, 1572 (2000) CrossRef
Slivken, S., Matlis, A., Jelen, C., Rybaltowski, A., Diaz, J., Razeghi, M., Appl. Phys. Lett. 74, 173 (1999) CrossRef
Mohseni, H., Razeghi, M., Brown, G.J., Park, Y.S., Appl. Phys. Lett. 78, 2107 (2001) CrossRef
M. Young, D. Chow, A, Hunter, R. Miles, Appl. Surf. Sci. 123/124, 395 (1998)
Fuchs, F., Weimar, U., Ahlswede, E., Pletschen, W., Schmitz, J., Walther, M., Proc. SPIE 3287, 14 (1998) CrossRef
Miles, R., Wilson, J., Proc. SPIE 2816, 76 (1996) CrossRef
Kim, S., Mohseni, H., Erdtmann, M., Michel, E., Jalen, C., Razeghi, M., Appl. Phys. Lett. 73, 963 (1998) CrossRef