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Origin of the photoluminescence shifts in porous silicon*

Published online by Cambridge University Press:  15 February 1998

H. Elhouichet ,
B. Bessaïs ,
O. Ben Younes ,
H. Ezzaouia  and
M. Oueslati
H. Elhouichet
Affiliation:
Institut National de Recherche Scientifique et Technique, Laboratoire de Photovoltaïque et des Matériaux Semiconducteurs, BP 95, 2050 Hammam-Lif, Tunisie
B. Bessaïs
Affiliation:
Institut National de Recherche Scientifique et Technique, Laboratoire de Photovoltaïque et des Matériaux Semiconducteurs, BP 95, 2050 Hammam-Lif, Tunisie
O. Ben Younes
Affiliation:
Laboratoire de Spectroscopie Raman, Département de Physique, Faculté des Sciences de Tunis, 1006 Le Belvédère, Tunis, Tunisie
H. Ezzaouia
Affiliation:
Institut National de Recherche Scientifique et Technique, Laboratoire de Photovoltaïque et des Matériaux Semiconducteurs, BP 95, 2050 Hammam-Lif, Tunisie
M. Oueslati
Affiliation:
Laboratoire de Spectroscopie Raman, Département de Physique, Faculté des Sciences de Tunis, 1006 Le Belvédère, Tunis, Tunisie
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Abstract

The origin of the photoluminescence (PL) shifts in Porous Silicon (PS) is discussed according to a quantum confinement – based model, in which we modelize the PS layer as a mixture of quantum dots and wires. It was shown that a PL blueshift or redshift may occur during laser irradiation of PS, depending on preparation conditions. No PL shift was observed for some PS samples, even after a long ageing in air, due to the presence of an amorphous silicon phase detected from Raman spectroscopy measurements. It was found that the presence of the amorphous phase plays an important role in the PL behaviour of oxidised PS.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 1 , Issue 2 , February 1998 , pp. 153 - 157
Copyright
© EDP Sciences, 1998

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References

* This paper was presented at the "Journées Maghrébines sur les Sciences des Matériaux" held at Hammamet the 8, 9 and 10 November 1996.