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Orientation control of rhomboedral PZT thin filmson Pt/Ti/SiO2/Si substrates

Published online by Cambridge University Press:  15 September 2001

B. Vilquin ,
R. Bouregba ,
G. Poullain ,
M. Hervieu  and
H. Murray
B. Vilquin*
Affiliation:
Laboratoire CRISMAT/ISMRA et Université de Caen (CNRS UMR 6508), 6 boulevard du Maréchal Juin, 14050 Caen Cedex, France
R. Bouregba
Affiliation:
Laboratoire CRISMAT/ISMRA et Université de Caen (CNRS UMR 6508), 6 boulevard du Maréchal Juin, 14050 Caen Cedex, France
G. Poullain
Affiliation:
Laboratoire CRISMAT/ISMRA et Université de Caen (CNRS UMR 6508), 6 boulevard du Maréchal Juin, 14050 Caen Cedex, France
M. Hervieu
Affiliation:
Laboratoire CRISMAT/ISMRA et Université de Caen (CNRS UMR 6508), 6 boulevard du Maréchal Juin, 14050 Caen Cedex, France
H. Murray
Affiliation:
Laboratoire CRISMAT/ISMRA et Université de Caen (CNRS UMR 6508), 6 boulevard du Maréchal Juin, 14050 Caen Cedex, France
*
[email protected]
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Abstract

Highly (111)- and (001)-oriented rhomboedral PZT thin films have been grown at 500 °C onplatinized silicon substrates by in situ RF magnetron sputtering. Crystallization of the perovskitephase was possible provided that a thin TiOx buffer layer was deposited prior to the PZT. Control ofPZT films orientation is demonstrated by changing the $\rm O_2/(Ar+O_2)$ ratio in the plasma gasduring the TiOx sputtering and its consequences on electrical properties of the ferroelectric samplesare presented. The structural properties of the TiOx buffer layer were studied by means oftransmission electronic microscopy in order to understand the relation between the TiOx seeding andthe orientation control of the PZT film.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 15 , Issue 3 , September 2001 , pp. 153 - 165
Copyright
© EDP Sciences, 2001

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