Published online by Cambridge University Press: 15 August 1999
In the present paper, we report a procedure to calculate tunnel currentsas a function of the applied voltage,by an optimization of the master equation, for a highly disordered tunnel junction array. We take a very large scatter of the tunnel resistances of the individual junctions.In order to reducethe number of equations, several approaches have still been consideredin the past. Here, we propose a procedure without any decoupling:we show that relevant results can be obtained inside and outsidethe Coulomb gap once the charge state range is automatically centered,already from a ±2 truncation of the equation set, for small offset chargesor low applied voltage. This last step is achieved in a straightforward way, through the calculation of the total tunneling rate leaving a given configuration.This has beenassessed there for the first time on a highly disordered array of five junctions.