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Optical and microwave characteristics of ambient temperature deposited zirconium tin titanate high-k films

Published online by Cambridge University Press:  06 August 2008

D. Pamu ,
K. Sudheendran ,
M. Ghanashyam Krishna  and
K. C. J. Raju
D. Pamu
Affiliation:
School of Physics, University of Hyderabad, Hyderabad-5000546, India
K. Sudheendran
Affiliation:
School of Physics, University of Hyderabad, Hyderabad-5000546, India
M. Ghanashyam Krishna
Affiliation:
School of Physics, University of Hyderabad, Hyderabad-5000546, India
K. C. J. Raju*
Affiliation:
School of Physics, University of Hyderabad, Hyderabad-5000546, India
*
[email protected]
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Abstract

High-k (Zr,Sn)TiO4 films were grown on glass substrate by DC magnetron sputtering at ambient temperature using elemental, all metallic targets. Films were polycrystalline irrespective of the oxygen partial pressure. The refractive index and optical bandgap of the films were in the range 1.79–1.59 at 600 nm and 3.27–3.39 eV, respectively. Highest value of microwave dielectric constant exhibited was 33 and lowest loss tangent was 0.001 at 10 GHz. Films prepared at 40% oxygen mixing percentage (OMP) gave minimum strain and the same film gave minimum dielectric loss with highest dielectric constant. A correlation between strain values and dielectric loss was observed. The grain sizes as observed from atomic force microscope images are found to be triangular in nature.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 44 , Issue 1: 10th Meeting of the French Microscopy Society (SFMU) , October 2008 , pp. 71 - 75
Copyright
© EDP Sciences, 2008

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