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Nonlinear electrical properties of cobalt doped SnO2·Ni2O3·Nb2O5 varistors

Published online by Cambridge University Press:  15 October 2001

C. P. Li ,
J. F. Wang ,
W. B. Su ,
H. C. Chen ,
W. X. Wang ,
D. X. Zhuang  and
L. Xu
C. P. Li*
Affiliation:
Department of Physics, Shandong University, Jinan 250100, PR China
J. F. Wang
Affiliation:
Department of Physics, Shandong University, Jinan 250100, PR China
W. B. Su
Affiliation:
Department of Physics, Shandong University, Jinan 250100, PR China
H. C. Chen
Affiliation:
Department of Physics, Shandong University, Jinan 250100, PR China
W. X. Wang
Affiliation:
Department of Physics, Shandong University, Jinan 250100, PR China
D. X. Zhuang
Affiliation:
Department of Physics, Shandong University, Jinan 250100, PR China
L. Xu
Affiliation:
Experiment Center, Shandong University, Jinan 250105, PR China
*
[email protected]
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Abstract

A new varistor system of SnO2·Ni2O3·Nb2O5 exhibits the relative dissatisfactory physical and electrical properties. The effect of cobalt oxide on the properties of the SnO2·Ni2O3·Nb2O5 varistors was investigated by measuring the densities, permittivities, the current-voltage properties and the properties of the defect barriers. It is found that the sample doped with 0.25 mol% Co2O3 exhibits the abnormal poorer electrical properties than the samples without Co2O3 dopants. However, the sample doped with 6.0 mol% Co2O3 exhibits the highest nonlinear coefficient ($\alpha=17.24$) and reference electrical field ($E_{\rm B}=561$ V/mm), although the sample doped with 1.0 mol% Co2O3 exhibits the highest densities ($\rho =6.87$ g/cm3) and permittivities. The sample with 6.0 mol% Co2O3 bears the highest barriers, but the sample with 1.0 mol% Co2O3 shows the narrowest barriers. The investigation of the sintering temperature shows that the samples sintered at 1450 °C exhibit the better physical and electrical properties. The results were discussed and the defect barrier model was also introduced to explain.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 16 , Issue 1 , October 2001 , pp. 3 - 9
Copyright
© EDP Sciences, 2001

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