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Nonequilibrium carrier dynamics in heavily p-doped GaAs
Published online by Cambridge University Press: 15 July 2004
Abstract
A non-degenerate four-wave mixing technique has been
applied to investigate carrier transport and recombination in
heavily C-doped GaAs embedded in a double-heterostructure.
The carriers were injected into the 1 µm-thick
p-GaAs layer via the 50 nm-thick barrier of
AlGaAs:C or InGaP:Si, using the light interference
pattern of two picosecond laser pulses at 532 nm. The
dependence of the nonequilibrium carrier grating decay time on the
grating period allows the determination of minority carrier
diffusion coefficients: D = 35 cm2/s
for p-GaAs
($p_0 = 2 \times 10^{19}$ cm−3) with AlGaAs
barriers and D = 27 cm2/s for p-GaAs ($p_{0} =
1 \times 10^{19}$
cm−3) with InGaP barriers. This
increase of electron mobility at the higher doping level was found
to be in agreement with the decreasing role of carrier-carrier
scattering in heavily-doped p-GaAs. The fast recombination
of nonequilibrium carriers in the vicinity of a front barrier
layer was evident and more pronounced for an AlGaAs than
for an InGaP barrier.
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- Research Article
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- Copyright
- © EDP Sciences, 2004
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