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Near-field imaging of the photocurrent on a patternedAu/GaAs interface with various wavelengths and bias*

Published online by Cambridge University Press:  15 March 1999

S. Davy ,
M. Spajer ,
J. Almeida ,
R. Generosi ,
A. Cricenti ,
G. Faini  and
C. Coluzza
S. Davy
Affiliation:
Laboratoire d'Optique P.M. Duffieux (UMR 6603 CNRS), Institut des Microtechniques (FR W0067 CNRS), UFR Sciences, 25030 Besançon Cedex, France
M. Spajer
Affiliation:
Laboratoire d'Optique P.M. Duffieux (UMR 6603 CNRS), Institut des Microtechniques (FR W0067 CNRS), UFR Sciences, 25030 Besançon Cedex, France
J. Almeida
Affiliation:
École Polytechnique Fédérale PH–Ecublens, 1015 Lausanne, Switzerland
R. Generosi
Affiliation:
CNR-ISM, via E. Fermi 38, 00044 Frascati Roma, Italy
A. Cricenti
Affiliation:
CNR-ISM, via E. Fermi 38, 00044 Frascati Roma, Italy
G. Faini
Affiliation:
L2M-CNRS, 196 avenue Henri Ravera, B.P. 107, 92225 Bagneux Cedex, France
C. Coluzza
Affiliation:
INFN, Dipartimento di Fisica, Università di Roma "La Sapienza" P. le A. Moro, 00185 Roma, Italy
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Abstract

This contribution presents an application of scanningnear-field optical microscopy to the characterization of semi-conductors.It is based on the photocurrent mapping of a patterned Au/GaAs structure(Schottky barrier) under local illumination by the nanosource. The resultsobtained with different wavelengths, metallized or dielectric probes anddifferent bias voltages exhibit photocurrent variations independent of the topography and induced by interface defects. Finally, from this study ofa patterned planar structure, we propose a method to determine the meanfree path of the charge carriers in the volume.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 5 , Issue 3 , March 1999 , pp. 283 - 288
Copyright
© EDP Sciences, 1999

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