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Investigation of compensation defect centres in semi-insulating InP crystals

Published online by Cambridge University Press:  15 July 2004

P. Kaminski ,
M. Pawlowski ,
R. Kozłowski ,
B. Surma ,
F. Dubecky ,
M. Yamada  and
M. Fukuzawa
P. Kaminski*
Affiliation:
Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warszawa, Poland
M. Pawlowski
Affiliation:
Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warszawa, Poland Military University of Technology, Kaliskiego 2, 00-908 Warszawa, Poland,
R. Kozłowski
Affiliation:
Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warszawa, Poland
B. Surma
Affiliation:
Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warszawa, Poland
F. Dubecky
Affiliation:
Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, 842 39 Bratislava, Slovak Republic
M. Yamada
Affiliation:
Dept. of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyoku, Kyoto 606, Japan
M. Fukuzawa
Affiliation:
Dept. of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyoku, Kyoto 606, Japan
*
[email protected]
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Abstract

Laplace transform photoinduced transient spectroscopy (LTPITS) has been applied to study defect centres in Fe-doped and undoped semi-insulating (SI) InP. A high resistivity (~ 2 × 107 Ω cm) of the latter was achieved by annealing at 950 °C for 40 h under a phosphorus overpressure. It is shown that shallow donors in this material have an activation energy of 10 meV and are mainly compensated with deep acceptors characterised by activation energies of 350 and 470 meV with respect to the bottom of the conduction band. In the Fe-doped material, the shallow donors are compensated with Fe-related deep acceptors having activation energies of 590 and 640 meV.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 171 - 175
Copyright
© EDP Sciences, 2004

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