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Interesting effects of the piezoelectric and internal electric fields on the band gap of InAs/GaAs/AlGaAs:δ-Si HEMTs

Published online by Cambridge University Press:  21 April 2014

Mahmoud Daoudi ,
Najla Khalifa ,
Ines Dhifallah  and
Abdelkarim Ouerghi
Mahmoud Daoudi*
Affiliation:
Laboratoire de Photovoltaïque, Centre de Recherche et des Technologies de l’énergie, BP 95, Hammam-Lif 2050, Tunisia
Najla Khalifa
Affiliation:
Laboratoire de Photovoltaïque, Centre de Recherche et des Technologies de l’énergie, BP 95, Hammam-Lif 2050, Tunisia
Ines Dhifallah
Affiliation:
Laboratoire de Photovoltaïque, Centre de Recherche et des Technologies de l’énergie, BP 95, Hammam-Lif 2050, Tunisia
Abdelkarim Ouerghi
Affiliation:
Laboratoire de Photonique et de Nanostructures, CNRS Route de Nozay, 91460 Marcoussis, France
*
ae-mail: [email protected]
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Abstract

The quantum confined Stark effect (QCSE) has been investigated in detail in GaAs/AlGaAs and InAs/GaAs/AlGaAs HEMTs structures grown by molecular beam epitaxy on (1 0 0) oriented GaAs substrates. A power dependent photoluminescence (PL) study allowed to highlight the QCSE caused by the internal electric field in the GaAs channel then a piezoelectric field reinforce the red-shift. Increasing the Si-δ-doping leads to; first a red-shift then a blue shift at high excitation power due to the stabilize quantum well structures tendency and the saturation phenomenon. The HEMT band structures and the theoretical activated electron densities at 10 K have been studied using the finite difference method and the simultaneously solve of the Schrödinger and the Poisson equations written within the Hartree approximation.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 66 , Issue 1 , April 2014 , 10102
Copyright
© EDP Sciences, 2014

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