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In-situ microscopy study of nanocavity shrinkage in Siunder ion beam irradiation

Published online by Cambridge University Press:  11 December 2002

M.-O. Ruault ,
M. C. Ridgway ,
F. Fortuna ,
H. Bernas  and
J. S. Williams
M.-O. Ruault*
Affiliation:
Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, UMR CNRS-Université Paris XI, Orsay, France
M. C. Ridgway
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australia
F. Fortuna
Affiliation:
Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, UMR CNRS-Université Paris XI, Orsay, France
H. Bernas
Affiliation:
Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, UMR CNRS-Université Paris XI, Orsay, France
J. S. Williams
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australia
*
[email protected]
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Abstract

We report an in situ transmission electron microscopy (TEM) study of nanocavity evolution in amorphous Si (a-Si) under ion beam irradiation. The size evolution of the nanocavities was monitored during ion irradiation with Si or As at various temperatures between 300 and 600 K. A linear decrease of the nanocavity diameter was found as the ion fluence increased; it was much faster than its counterpart in crystalline Si (c-Si). Here, the shrinkage rate depended on the irradiation-induced atomic displacement rate. No significant temperature dependence was observed, confirming that the irradiation-induced nanocavity shrinkage in a-Si is essentially due to ballistic interactions, i.e., differs radically from that in c-Si. 


Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 23 , Issue 1 , July 2003 , pp. 39 - 40
Copyright
© EDP Sciences, 2003

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References

Bruel, M., Electron Lett. 31, 1201 (1995) CrossRef
Raineri, V., Campisano, U., Nucl. Instrum. Methods Phys. Res. B 120, 56 (1996) CrossRef
Kalyanaraman, R., Haynes, T.E., Venezia, V.C., Jacobson, D.C., Gossmann, H.-J., Rafferty, C.S., Appl. Phys. Lett. 76, 3379 (2000) CrossRef
Myers, S.M., Petersen, G.A., Phys. Rev. B 57, 7015 (1998) CrossRef
Wong-Leung, J., Williams, J.S., Kinomura, A., Nakano, Y., Hayashi, Y., Eaglesham, D.J., Phys. Rev. B 59, 7990 (1999) CrossRef
R G. Elliman, J. S. Williams, in Materials Analysis Using Ion Beams, edited by J.R. Bird, J.S. Williams (Academic, Sydney, 1988), Chap. 4
Williams, J.S., Ridgway, M.C., Conway, M.J., Wong-Leung, J., Zhu, X.F., Petravic, M., Fortuna, F., Ruault, M.-O., Bernas, H., Kinomura, A., Nakano, Y., Hayashi, Y., Nucl. Instrum. Methods Phys. Res. B 178, 33 (2001) CrossRef
Williams, J.S., Zhu, X.F., Ridgway, M.C., Conway, M.J., Williams, B.C., Fortuna, F., Ruault, M.-O., Bernas, H., Appl. Phys. Lett. 77, 4280 (2000) CrossRef
Zhu, X.F., Williams, J.S., Conway, M.J., Ridgway, M.C., Fortuna, F., Ruault, M.-O., Bernas, H., Appl. Phys. Lett. 79, 3416 (2001) CrossRef
M.-O. Ruault, J. Chaumont, H. Bernas, Nucl. Instrum. Methods B 209/210, 351 (1983)
J.F. Ziegler, J. Biersack, U. Littmark, The Stopping and Range of Ions in Solids (Pergamon Press, NY, 1996), see http://www.srim.org