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Influence of interfacial oxygen on single-crystal magnetic tunnel junctions

Published online by Cambridge University Press:  19 June 2008

F. Bonell ,
A. M. Bataille ,
S. Andrieu ,
C. Tiusan ,
B. Kierren ,
G. Lengaigne  and
D. Lacour
F. Bonell*
Affiliation:
Laboratoire de Physique des Matériaux, BP 239, 54506 Vandoeuvre-lès-Nancy, France
A. M. Bataille
Affiliation:
Laboratoire de Physique des Matériaux, BP 239, 54506 Vandoeuvre-lès-Nancy, France
S. Andrieu
Affiliation:
Laboratoire de Physique des Matériaux, BP 239, 54506 Vandoeuvre-lès-Nancy, France
C. Tiusan
Affiliation:
Laboratoire de Physique des Matériaux, BP 239, 54506 Vandoeuvre-lès-Nancy, France
B. Kierren
Affiliation:
Laboratoire de Physique des Matériaux, BP 239, 54506 Vandoeuvre-lès-Nancy, France
G. Lengaigne
Affiliation:
Laboratoire de Physique des Matériaux, BP 239, 54506 Vandoeuvre-lès-Nancy, France
D. Lacour
Affiliation:
Laboratoire de Physique des Matériaux, BP 239, 54506 Vandoeuvre-lès-Nancy, France
*
[email protected]
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Abstract

The influence of adsorbed oxygen at the first interface of single-crystal Fe(001)/MgO(001)/Fe(001) magnetic tunnel junctions is investigated. Firstly, the adsorption kinetics of O2 on the Fe(001) surface is studied in the monolayer regime by X-ray photoelectrons spectroscopy and scanning tunnelling microscopy experiments. We show that different species exist at the oxidized surface. The tunnel magneto-resistance of oxygen-doped magnetic tunnel junctions is found to decrease but remains large even for oxygen coverages exceeding one monolayer.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 43 , Issue 3: Topical Issue ITFPC (Innovations on Thin Films Processing and Characterisation) , September 2008 , pp. 357 - 361
Copyright
© EDP Sciences, 2008

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