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Indium oxide violet photodiodes

Published online by Cambridge University Press:  06 July 2006

L.-C. Chen
L.-C. Chen*
Affiliation:
Department of Electro-optical Engineering, National Taipei University of Technology, 1, sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan, Republic of China
*
[email protected]
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Abstract

Indium oxide (In2O3) violet photodiodes were fabricated. The In2O3 layers were from oxidation of InN deposited by magnetron reactive sputtering. It was found the photocurrent approximately 5.06 × 10−4 A at a bias of 2 V and a photocurrent to dark current contrast ratio higher than around two orders of magnitude. The reverse leakage current prior to breakdown is around 10−5 A. The photodiodes exhibited a narrow responsive region at wavelength from 400 nm to 440 nm. The values of responsivity and quantum efficiency (QE) at 420 nm at biases of 2 V were 0.1985 A/W and 58.62%, respectively.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 35 , Issue 1 , July 2006 , pp. 13 - 15
Copyright
© EDP Sciences, 2006

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References

Lee, I.J., Kim, J.Y., Hur, T.B., Kim, H.K., Phys. Status Solidi A 201, 2777 (2004)
Yodo, T., Kitayama, Y., Miyaki, K., Yona, H., Harada, Y., Jpn J Appl. Phys. 43, L139 (2004) CrossRef
Hur, T.B., Lee, I.J., Park, H.L., Hwang, Y.H., Kim, H.K., Solid State Commun. 130, 397 (2004) CrossRef
Chen, L.C., Chen, H. C., Jpn J. Appl. Phys. 44, 2995 (2005) CrossRef
Chopra, K.L., Major, S., Pandya, D.K., Thin Solid Films 102, 1 (1983) CrossRef
Kamimori, T., Nagai, J., Mizuhashi, M., Sol. Energy Mater. 16, 27 (1987) CrossRef
L.C. Chen, W.H. Lan, R.M. Lin, H.T. Shen, H.C. Chen, Appl. Surf. Sci. (to be published)
Kim, J.K., Jang, H.W., Jeon, C.M., Lee, J.L., Appl. Phys. Lett. 81, 4655 (2002) CrossRef
Chen, C.H., Chang, S.J., Su, Y.K., Chi, G.C., Chi, J.Y., Chang, C.A., Sheu, J.K., Chen, J.F., IEEE Photonic. Tech. L. 13, 848 (2001) CrossRef
Motogaito, A., Ohta, K., Hiramatsu, K., Ohuchi, Y., Tadatomo, K., Hamamura, Y., Fukui, K., Phys. Status Solidi A 188, 337 (2001) 3.0.CO;2-H>CrossRef
Miyake, H., Yasukawa, H., Kida, Y., Ohta, K., Shibata, Y., Motogaito, A., Hiramatsu, K., Ohuchi, Y., Tadatomo, K., Hamamura, Y., Fukui, K., Phys. Status Solidi A 200, 151 (2003) CrossRef
Monroy, E., Palacios, T., Hainaut, O., Omnes, F., Calle, F., Hochedez, J. F., Appl. Phys. Lett. 80, 3198 (2002) CrossRef
Jiang, H., Okui, A., Ishikawa, H., Shao, C.L., Egawa, T., Jimbo, T., Jpn J. Appl. Phys. 41, L34 (2002) CrossRef
Arnaudov, B., Paskova, T., Paskov, P.P., Magnusson, B., Valcheva, E., Monemar, B., Lu, H., Schaff, W.J., Amano, H., Akasaki, I., Phys. Rev. B 69, 115216 (2004) CrossRef
Bhuiyan, A.G., Hashimoto, A., Yamamoto, A., J. Appl. Phys. 94, 2779 (2003) CrossRef
Wu, J., Walukiewicz, W., Li, S.X., Armitage, R., Ho, J.C., Weber, E.R., Haller, E.E., Lu, H., Schaff, W.J., Barcz, A., Jakiela, R., Appl. Phys. Lett. 84, 2805 (2004) CrossRef
Bhuiyan, A.G., Sugita, K., Kasashima, K., Hashimoto, A., Yamamoto, A., Davydov, V.Yu., Appl. Phys. Lett. 83, 4788 (2003) CrossRef
Yoshimoto, M., Yamamoto, H., Huang, W., Harima, H., Saraie, J., Chayahara, A., Horino, Y., Appl. Phys. Lett. 83, 3480 (2003) CrossRef
Motlan, E.M. Goldys, T.L. Tansley, J. Cryst. Growth 241, 165 (2002) CrossRef
S.M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981)