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Incorporation modes of silicon in GaAs: Si grown by metalorganic vapor phase epitaxy

Published online by Cambridge University Press:  15 December 1998

L. Beji ,
A. Rebey  and
B. El Jani
L. Beji
Affiliation:
Laboratoire de Physique des Matériaux, Faculté des Sciences, TN-5000 Monastir, Tunisia
A. Rebey
Affiliation:
Laboratoire de Physique des Matériaux, Faculté des Sciences, TN-5000 Monastir, Tunisia
B. El Jani
Affiliation:
Laboratoire de Physique des Matériaux, Faculté des Sciences, TN-5000 Monastir, Tunisia
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Abstract

The incorporation of silicon from SiH4 in GaAs has been studied on a wide range of growth conditions by atmospheric pressure metalorganic vapor phase epitaxy (AP-MOVPE). The highest free carrier concentration exceeds 1 × 1019 cm−3. Compensation ratios appear to be strongly dependent on the SiH4 partial pressure. The relatively high compensation ratios essentially originate from the amphoteric behaviour of silicon. The temperature dependence of silicon doping has been investigated in the range 650 °C to 765 °C with various silane partial pressures. The activation energy of Si incorporation varies from 0 to 2.2 eV. The dependence of the free electron concentration on the arsine partial pressure (P AsH3 ) leads to the empirical relationship:n = aP AsH3 + $bP_{AsH_3}^{-\frac{4}{3}$ , which describes the relationship between silicon doping concentration and arsine partial pressure.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 4 , Issue 3 , December 1998 , pp. 269 - 273
Copyright
© EDP Sciences, 1998

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