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In2O3/Si heterojunction solar cells fabricated by InN oxidation

Published online by Cambridge University Press:  21 September 2007

L.-C. Chen
L.-C. Chen*
Affiliation:
Department of Electro-optical Engineering, National Taipei University of Technology, 1, sec.3, Chung-Hsiao E. Rd., Taipei 106, Taiwan, Republic of China
*
[email protected]
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Abstract

The present paper reports on the fabrication of In2O3 layers by oxidation of InN thin films deposited on n-type silicon substrate by magnetron reactive sputtering. The subsequent solar cells using the resulting In2O3/Si heterojunctions exhibit an ideality factor, deduced from current-voltage (I – V) characteristics of around 2.52 at a forward bias of 0.5 V. Other measured parameters were the short-circuit current (I sc ), the open-circuit voltage (V oc ), the maximum output power (P m ), the fill factor (FF) and the efficiency (η ), which had values of were 3.17 mA, 0.75 V, 0.869 mW, 0.365 and 9.66 %, respectively, under AM 1.5 illumination. The value of series resistance was around 107 Ω. In2O3 films formed by the oxidation of InN have a higher open-circuit voltage than In2O3-based solar cells formed by the oxidation of indium.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 40 , Issue 2 , November 2007 , pp. 145 - 148
Copyright
© EDP Sciences, 2007

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