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Impact ionization coefficients of 4H- and 6H-SiC

Published online by Cambridge University Press:  23 October 2012

C.C. Sun ,
A.H. You  and
E.K. Wong
C.C. Sun*
Affiliation:
Centre for Diploma Programmes, Multimedia University, Jalan Ayer Keroh Lama, 75450 Melaka, Malaysia
A.H. You
Affiliation:
Faculty of Engineering and Technology, Multimedia University, Jalan Ayer Keroh Lama, 75450 Melaka, Malaysia
E.K. Wong
Affiliation:
Faculty of Engineering and Technology, Multimedia University, Jalan Ayer Keroh Lama, 75450 Melaka, Malaysia
*
ae-mail: [email protected]
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Abstract

The Monte Carlo (MC) simulation of electron and hole impact ionization rates for 4H- and 6H-SiC in high electric field is presented. This work focuses on the study of impact ionization rates and impact ionization coefficients since these parameters play a very important role in determining the device performance. In our simulation, the impact ionization rates are obtained by using modified Keldysh equation with a softness factor fitted to the experimental data described by other researchers. The electron and hole impact ionization coefficients in 4H- and 6H-SiC are parameterized at high electric field. The electron and hole impact ionization coefficients for a wide range of electric fields have been successfully derived in our model.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 60 , Issue 1 , October 2012 , 10204
Copyright
© EDP Sciences, 2012

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