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Identification of hydrogen related defects in proton implanted float-zone silicon

Published online by Cambridge University Press:  29 November 2002

P. Lévêque ,
A Hallén ,
B. G. Svensson ,
J. Wong-Leung ,
C. Jagadish  and
V. Privitera
P. Lévêque
Affiliation:
Royal Institute of Technology, Solid State Electronics, Electrum 229, 16440 Kista-Stockholm, Sweden
A Hallén
Affiliation:
Royal Institute of Technology, Solid State Electronics, Electrum 229, 16440 Kista-Stockholm, Sweden
B. G. Svensson*
Affiliation:
Royal Institute of Technology, Solid State Electronics, Electrum 229, 16440 Kista-Stockholm, Sweden Oslo University, Department of Physics, Physical Electronics, PB 1048 Blindern, 0316 Oslo, Norway
J. Wong-Leung
Affiliation:
Australian National University, Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Canberra ACT 0200, Australia
C. Jagadish
Affiliation:
Australian National University, Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Canberra ACT 0200, Australia
V. Privitera
Affiliation:
CNR-IMETEM, Stradale Primosole 50, 95121 Catania, Italy
*
[email protected]
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Abstract

Hydrogen related defects in high purity n-type float zone silicon samples have been studied by means of Deep Level Transient Spectroscopy. They were introduced, as well as the characteristic vacancy-oxygen (VO) and divacancy (${\rm V}_2$) centers, by MeV proton implantation. Two hydrogen related defect levels were resolved at 0.32 eV and 0.45 eV below the conduction band edge (Ec). Careful annealing studies indicate strongly that a third hydrogen related level, overlapping with the singly negative charge state level of ${\rm V}_2$, is also present in the implanted samples. The annealing behavior of the hydrogen related defects has been compared with literature data leading to a rather firm identification. The $E_{\rm c}-0.32$ eV level originates from a VO center partly saturated with hydrogen (a VOH complex) while the $E_{\rm c}-0.45$ eV level may be ascribed to a complex involving a monovacancy and a hydrogen atom (a VH complex). The third hydrogen related defect is tentatively ascribed to a complex involving a hydrogen atom and a divacancy (a ${\rm V}_2{\rm H}$ complex).

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 23 , Issue 1 , July 2003 , pp. 5 - 9
Copyright
© EDP Sciences, 2003

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