Hostname: page-component-cd9895bd7-dzt6s Total loading time: 0 Render date: 2024-12-26T16:47:49.816Z Has data issue: false hasContentIssue false
  • English
  • Français

High performance AlGaN/GaN power switch with Si3N4 insulation

Published online by Cambridge University Press:  14 January 2013

Defeng Lin ,
Xiaoliang Wang ,
Hongling Xiao ,
He Kang ,
Cuimei Wang ,
Lijuan Jiang ,
Chun Feng ,
Hong Chen ,
Qingwen Deng  and
Yang Bi
...Show all authors
Defeng Lin
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Xiaoliang Wang*
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, P.O. Box 912, Beijing 100083, P.R. China
Hongling Xiao
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
He Kang
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Cuimei Wang
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Lijuan Jiang
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Chun Feng
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Hong Chen
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Qingwen Deng
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Yang Bi
Affiliation:
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Jingwen Zhang
Affiliation:
ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, P.O. Box 912, Beijing 100083, P.R. China
Xun Hou
Affiliation:
ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, P.O. Box 912, Beijing 100083, P.R. China
*
ae-mail: [email protected]
Get access

Abstract

We report the fabrication of AlGaN/GaN high electron mobility transistors (MIS-HEMTs) with a high breakdown voltage by employing a metal-insulator-semiconductor (MIS) gate structure using Si3N4 insulator. The Si3N4 films were deposited by plasma enhanced chemical vapor deposition (PECVD) as the surface passivation, interlayer films and the gate dielectric. In comparison with Schottky-gate HEMTs, the gate leakage currents of MIS-HEMTs exhibited three orders of magnitude reduction. With similar device structures, the off-state breakdown voltage of MIS-HEMTs was 1050 V with a specific on-resistance of 4.0 mΩ cm2, whereas the breakdown voltage and specific on-resistance of SG-HEMTs were 740 V and 4.4 mΩ cm2, respectively. In addition, the MIS-HEMTs exhibited little current slump in the pulsed measurements and possessed faster switch speed than Si MOSFET. We demonstrate that AlGaN/GaN MIS-HEMTs are promising not only for microwave applications but also for high power switching applications.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 61 , Issue 1 , January 2013 , 10101
Copyright
© EDP Sciences, 2013

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Baliga, B.J., IEEE Trans. Electron Devices ED-43, 1717 (1996)CrossRef
Nomura, T., Kambayashi, H., Masuda, M., Ishii, S., Ikeda, N., Lee, J., Yoshida, S., IEEE Trans. Electron Devices 53, 2908 (2006)CrossRef
Yoshida, S., Li, J., Wada, T., Takehara, H., IEEE Proc. Circuits Devices Syst. 151, 207 (2004)CrossRef
Shi, J., Eastman, L.F., Xin, X., Pophristic, M., Appl. Phys. Lett. 95, 042103-3 (2009)
Zhang, N.-Q., Keller, S., Parish, G., Heilman, S., Denbaars, S.P., Mishra, U.K., IEEE Electron Device Lett. 21, 421 (2000)CrossRef
Yoshida, S., Ishii, H., Li, J., Wang, D., Ichikawa, M., Solid State Electron. 47, 589 (2003)CrossRef
Sotio, W., Takada, Y., Kuraguchi, M., Tsuda, K., Omura, I., Ogura, T., IEEE Trans. Electron Devices 50, 2528 (2003)
Yagi, S., Shimizu, M., Inada, M., Yamamoto, Y., Piao, G., Okumura, H., Yano, Y., Akutsu, N., Ohashi, H., Solid State Electron. 50, 1057 (2006)CrossRef
Ochiai, M., Akita, M., Ohno, Y., Kishimoto, S., Maezawa, K., Mizutani, T., Jpn J. Appl. Phys. Lett. Part 1 42, 2278 (2003)CrossRef
Kuraguchi, M., Takada, Y., Saito, W., Omura, I., Tsuda, K., Phys. Stat. Sol. C 2, 2647 (2005)CrossRef
Zhang, N.-Q., Moran, B., DenBaars, S.P., Mishra, U.K., Wang, X.W., Ma, T.P., Phys. Stat. Sol. A 188, 213 (2001)3.0.CO;2-8>CrossRef
Shi, J., Choi, Y.C., Pophristic, M., Spencer, M.G., Eastman, L.F., Phys. Stat. Sol. C 5, 2013 (2008)CrossRef
Khan, M.A., Simin, G., Yang, J., Zhang, J., Koudymov, A., Shur, M.S., Gaska, R., Hu, X., Tarakji, A., IEEE Trans. Microwave Theor. Tech. 51, 624 (2003)CrossRef
Simin, G., Hu, X., Tarakji, A., Zhang, J., Koudymov, A., Saygi, S., Yang, J., Khan, M.A., Shur, M.S., Gaska, R., Jpn J. Appl. Phys. Part 2 40, L1142 (2001)CrossRef
Hu, X., Koudymov, A., Simin, G., Yang, J., Khan, M.A., Tarakji, A., Shur, M.S., Gaska, R., Appl. Phys. Lett. 79, 2832 (2001)CrossRef
Ikeda, N., Kato, K., Kondoh, K., Kambayashi, H., Li, J., Yoshida, S., Phys. Stat. Sol. A 204, 2028 (2007)CrossRef