Hostname: page-component-cd9895bd7-gbm5v Total loading time: 0 Render date: 2024-12-25T17:49:16.354Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth and characterization of urea-oxalic acid crystals by solution growth technique

Published online by Cambridge University Press:  15 November 2013

V. Chithambaram ,
S. Jerome Das ,
Sivakumar Krishnan ,
M. Basheer Ahamed  and
R. Arivudai Nambi
V. Chithambaram
Affiliation:
Department of Physics, Dhanalakshmi College of Engineering, 601301 Chennai, India
S. Jerome Das
Affiliation:
Department of Physics, Loyola College, 600034 Chennai, India
Sivakumar Krishnan*
Affiliation:
Department of Physics, B.S. Abdur Rahman University, 600048 Chennai, India
M. Basheer Ahamed
Affiliation:
Department of Physics, B.S. Abdur Rahman University, 600048 Chennai, India
R. Arivudai Nambi
Affiliation:
Department of Chemistry, Dhanalakshmi College of Engineering, 601301 Chennai, India
*
ae-mail: [email protected]
Get access

Abstract

Single crystals of urea-oxalic acid (UOA) have been grown from aqueous solution by slow evaporation technique. Single crystal X-ray diffraction analysis confirmed that the grown crystals belong to monoclinic system having space group P21/C. The presence of functional groups was confirmed by using Fourier transform infrared (FTIR) spectroscopy. Optical absorption studies show very low absorption in entire visible region and the UV cut-off is found to be around 240 nm. Thermal analysis studies were carried out using TG/DTA analysis and the grown crystal is thermally stable up to 180 °C. Dielectric constant studies confirm the ferroelectric property of the materials and very low dielectric loss reveals very high purity of the crystal.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 64 , Issue 2 , November 2013 , 20201
Copyright
© EDP Sciences, 2013

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Renugadevi, R., Kanchana, G., Kesavasamy, R., Crystal Growth 55A, 13033 (2013)
Jeyaprakash Manoharan, A.J., Joseph John, N., Revathi, V., Rajendran, K.V., Andavan, P.M., Indian J. Sci. Tech. 4, 688 (2011)
Lee, J.J., Thio, C.L., Desu, S.B., J. Appl. Phys. 78, 5073 (1995)CrossRef
Dey, S., Zuleeg, R., Ferroelectrics 108, 37 (1990)CrossRef
Nakamura, K., IEEE 2, 389 (2002)
Barkley, J.R., Brixner, L.H., Hogan, E.M., Waring, R.K., Ferroelectrics 3, 191 (1972)CrossRef
Barkley, J.R., Brixner, L.H., Hogan, E.M., IEEE Symposium on the Application of Ferroelectrics (York Town Heights, New York, 1972)Google Scholar
Eyring, L., Progress in Science and Technology of Rare Earths (Pergamon Press, New York, 1964)Google Scholar
Bhagavannarayana, G., Kushwaha, S.K., J. Appl. Cryst. 43, 154 (2010)CrossRef
Madhurambal, G., Mariappan, M., Indian J. Pure Appl. Phys. 48, 264 (2012)
Harkema, S., Bats, J.W., Weyenberg, A.M., Feil, D., Acta Cryst. B28, 1646 (1972)CrossRef